We present near-UV GaN light-emitting diodes (LEDs) grown on patterned GaN/sapphire
templates with improved material quality and light extraction efficiency. Enhancement of light …

A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE)
on GaN/Al 2 O 3 substrates was performed. The substrates were fabricated by metal-organic …

The interaction of microstructure defects is regarded as a possible tool for the reduction of
the defect density and improvement of the crystal quality. In this study, this general approach …

The spatial distribution and the projected line directions of dislocations intersecting a cross-
sectional (10 1 0) cleavage plane of a GaN (0001) epitaxial layer is mapped using scanning …

This study presents an approach for patterning a polydimethylsiloxane (PDMS) phosphor
film with a photonic crystal nano-honeycomb structure on a blue chip package. A phosphor …

Nanopillar structures were prepared by dry etching of maskless epitaxial lateral overgrowth
(MELO) GaN samples using a mask of Ni nanoparticles formed upon annealing thin Ni films …

GaN epitaxial layers with embedded air voids grown on patterned SiO2 AlN/sapphire
templates were proposed. Using interruption‐free epitaxial lateral overgrowth technology …

GaN films (10 μm-thick) of high crystalline quality were prepared on sputtered AlN/PSS
template by hydride vapor phase epitaxy (HVPE). By introducing the two-step growth …

Актуальность проблемы. В настоящее время полупроводниковые светодиоды,
излучающие в синем диапазоне электромагнитного спектра, находят широкое …

In this paper, we investigated GaN-based light-emitting diodes (LEDs) with embedded air
voids grown by pulsed growth epitaxial (PGE) method. The void shape can be successfully …