Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE
K Frei, R Trejo-Hernández, S Schütt… - Japanese Journal of …, 2019 - iopscience.iop.org
Due to its outstanding polarization properties and the possibility of lattice-matched growth on
GaN, Sc x Al 1-x N is a promising material among group III nitrides providing a wide field of …
GaN, Sc x Al 1-x N is a promising material among group III nitrides providing a wide field of …
Dependence of electrical characteristics on epitaxial layer structure of AlGaN/GaN HEMTs fabricated on freestanding GaN substrates
Y Ando, R Makisako, H Takahashi… - … on Electron Devices, 2021 - ieeexplore.ieee.org
This article reports a systematic study on the effects of the epitaxial layer structure on the
electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated …
electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated …
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates
While the heteroepitaxial growth of gallium nitride-based materials and devices on
substrates such as SiC, sapphire, and Si has been well-documented, the lack of a cost …
substrates such as SiC, sapphire, and Si has been well-documented, the lack of a cost …
[HTML][HTML] Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE
The authors have investigated different methods for preparing the surfaces of freestanding,
Ga-polar, hydride vapor-phase epitaxy grown GaN substrates to be used for homoepitaxial …
Ga-polar, hydride vapor-phase epitaxy grown GaN substrates to be used for homoepitaxial …
Remarkable current collapse suppression in GaN HEMTs on free-standing GaN substrates
Y Kumazaki, T Ohki, J Kotani, S Ozaki… - 2019 IEEE BiCMOS …, 2019 - ieeexplore.ieee.org
The current collapse phenomena, particularly the trap-induced threshold voltage shift, was
drastically reduced in GaN high-electron-mobility transistors (GaN-HEMTs) fabricated on …
drastically reduced in GaN high-electron-mobility transistors (GaN-HEMTs) fabricated on …
Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates
We report the structural and electrical properties of ultrathin-barrier AlN/GaN
heterostructures grown on freestanding GaN substrates by rf plasma-assisted molecular …
heterostructures grown on freestanding GaN substrates by rf plasma-assisted molecular …
III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge
Charge is observed at the regrowth interface for heterostructure field-effect transistors
(HFETs) grown on semi-insulating (SI) bulk GaN substrates, even with Fe do** in the …
(HFETs) grown on semi-insulating (SI) bulk GaN substrates, even with Fe do** in the …
AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization
We investigate the role of substrate temperature and gallium flux on the DC and microwave
properties of AlGaN/GaN high electron mobility transistors grown by molecular-beam epitaxy …
properties of AlGaN/GaN high electron mobility transistors grown by molecular-beam epitaxy …
Nonalloyed ohmic contact of AlGaN/GaN HEMTs by selective area growth of single‐crystal n+‐GaN using plasma assisted molecular beam epitaxy
Z Zheng, H Seo, L Pang, K Kim - Physica status solidi (a), 2011 - Wiley Online Library
Selective area growth (SAG) based on plasma assisted molecular beam epitaxy (PAMBE)
was demonstrated to be effective to achieve low contact resistance for nonalloyed ohmic …
was demonstrated to be effective to achieve low contact resistance for nonalloyed ohmic …
Enhancing thermal dissipation ability and electrical performance in GaN-on-GaN HEMTs through stepped-carbon buffer design
S Li, B Meng, M Wu, H Sun, B Yang, L Yang… - Applied Physics …, 2024 - pubs.aip.org
This study investigates the thermal dissipation ability and electrical performance of GaN-on-
GaN HEMTs through a stepped-C buffer design. We analyzed the relationship between …
GaN HEMTs through a stepped-C buffer design. We analyzed the relationship between …