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Design and Modeling of High-Efficiency -Nanowire Metal-Oxide-Semiconductor Solar Cells beyond the Shockley-Queisser Limit: An NEGF Approach
The present work proposes a Ga As-nanowire-based vertical metal-oxide-semiconductor
(MOS) solar cell of quantum scale to achieve very high efficiency beyond the Shockley …
(MOS) solar cell of quantum scale to achieve very high efficiency beyond the Shockley …
Exceptional‐Point‐Enhanced Superior Sensing Using Asymmetric Coupled‐Lossy‐Resonator Based Optical Metasurface
Exotic optical responses of designed metasurfaces, including non‐Hermitian photonic
systems exhibiting exceptional point (EP)‐singularities, offer diverse applications in the field …
systems exhibiting exceptional point (EP)‐singularities, offer diverse applications in the field …
Modelling and analysis of confluence attack by hardware trojan in noc
Over the years, system on chip (SoC) designs have evolved extensively sophisticated in
order to fulfil the need of increasing complexity of running applications driven by the …
order to fulfil the need of increasing complexity of running applications driven by the …
Voltage-Tunable Quantum-Dot Array by Patterned -Nanowire-Based Metal-Oxide-Semiconductor Devices
We report the fabrication of an array of highly scaled Ge-nanowire-based (radius∼ 25 nm)
vertical metal-oxide-semiconductor devices that can operate as voltage-tunable quantum …
vertical metal-oxide-semiconductor devices that can operate as voltage-tunable quantum …
Understanding the electrostatics of top-electrode vertical quantized Si nanowire metal–insulator–semiconductor (MIS) structures for future nanoelectronic applications
In this paper, a comprehensive analysis of the electrostatics of top-electrode vertically
aligned quantized Si nanowire metal–insulator–semiconductor (MIS) structure is performed …
aligned quantized Si nanowire metal–insulator–semiconductor (MIS) structure is performed …