The stray inductance of the commutation circuit significantly impacts power semiconductor
device switching. This paper presents a comprehensive investigation on stray inductance …

A totem-pole bridgeless power factor corrector has been widely used in high-power ac-dc
power conversion for its low component count and high energy efficiency. Its active bridge is …

This paper proposes a novel modulation technique for the bidirectional operation of the
phase-shift full-bridge (PSFB) dc/dc power converter. The forward or buck operation of this …

This paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a
function of different operating conditions. The knowledge of their effects is crucial to properly …

This paper investigates the reverse recovery behaviour of a SiC MOSFET intrinsic/body
diode and compares the diode's performance with similarly rated SiC Schottky diodes at …

The body diodes of 10kV SiC MOSFETs can be used as anti-parallel diodes in medium
voltage converters instead of widely used SiC JBS and PiN diodes. Characterization of …

In this paper, the performance of 1.2 kV SiC planar MOSFETs, Trench MOSFETs and 1.2 kV
SiC Cascode JFETs is compared under 3 conditions. Firstly, the devices are switched with …

We present static and dynamic performance of a 3.3 kV SiC half-bridge module built on the
ABB module platform–LinPak. The module exploits a multilevel/stacked substrate concept to …

Considering potential applications related to superconductivity and aerospace (typically less
than 100 K), in this article, the temperature dependence of silicon carbide (SiC) power …

With the unceasing advancement of wide-bandgap (WBG) semiconductor technology, the
minimal reverse-recovery charge Qrr and other more powerful natures of WBG transistors …