Engineering van der Waals materials for advanced metaphotonics

H Lin, Z Zhang, H Zhang, KT Lin, X Wen… - Chemical …, 2022 - ACS Publications
The outstanding chemical and physical properties of 2D materials, together with their
atomically thin nature, make them ideal candidates for metaphotonic device integration and …

Exploring two-dimensional materials toward the next-generation circuits: from monomer design to assembly control

M Zeng, Y ** in van der Waals heterostructure transistors
D Lee, JJ Lee, YS Kim, YH Kim, JC Kim, W Huh… - Nature …, 2021 - nature.com
Do** is required to modulate the electrical properties of semiconductors but introduces
impurities that lead to Coulomb scattering, which hampers charge transport. Such scattering …

Recent advances in ambipolar transistors for functional applications

Y Ren, X Yang, L Zhou, JY Mao… - Advanced Functional …, 2019 - Wiley Online Library
Ambipolar transistors represent a class of transistors where positive (holes) and negative
(electrons) charge carriers both can transport concurrently within the semiconducting …

Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces

C Zhou, S Zhang, Z Lv, Z Ma, C Yu, Z Feng… - npj 2D Materials and …, 2020 - nature.com
Self-driven photodetectors that can detect light without any external voltage bias are
important for low-power applications, including future internet of things, wearable …

Optoelectronic and photonic devices based on transition metal dichalcogenides

K Thakar, S Lodha - Materials Research Express, 2020 - iopscience.iop.org
Transition metal dichalcogenides (TMDCs) are a family of two-dimensional layered
materials (2DLMs) with extraordinary optical properties. They present an attractive option for …

Interlayer Coupling Induced Infrared Response in WS2/MoS2 Heterostructures Enhanced by Surface Plasmon Resonance

G Wang, L Li, W Fan, R Wang, S Zhou… - Advanced Functional …, 2018 - Wiley Online Library
Infrared light detection is generally limited by the intrinsic bandgap of semiconductors, which
suppresses the freedom in infrared light photodetector design and hinders the development …