Performance analysis of silicon nanotube dielectric pocket Tunnel FET for reduced ambipolar conduction
This work presents a novel structure of Nanotube Tunnel FET in which a high-k dielectric
pocket is placed at the drain side to improve DC performance of the device. Using 3D TCAD …
pocket is placed at the drain side to improve DC performance of the device. Using 3D TCAD …
Improved DC performances of gate-all-around si-nanotube tunnel FETs using gate-source overlap
In this work, a novel structure of Gate-all-Around Si-Nanotube Tunnel FET (GAA Si-NTTFET)
has been proposed to improve its electrical characteristics by overlap** a portion of …
has been proposed to improve its electrical characteristics by overlap** a portion of …
Performance improvement of double-gate TFET using metal strip technique
In order to overcome the limitations of a tunnel field-effect transistor (TFET) and to enhance
its performance, the use of a low work function live strip (LWLS) in a conventional double …
its performance, the use of a low work function live strip (LWLS) in a conventional double …
Tuning of threshold voltage in silicon nano-tube FET using halo do** and its impact on analog/RF performances
In this paper, a novel method is proposed for the first time to achieve multiple threshold
voltage (VT) for Silicon Nanotube FET. Using TCAD simulator, it is shown that threshold …
voltage (VT) for Silicon Nanotube FET. Using TCAD simulator, it is shown that threshold …
An extensive analysis of source engineered tunnel FET for low power biosensing application
In this work, the source-engineered tunnel field effect transistor is studied and optimized for
low-power applications. To achieve this, a double-gate TFET structure is employed with …
low-power applications. To achieve this, a double-gate TFET structure is employed with …
Comparative study of analog parameters for various silicon-based tunnel field-effect transistors
In this ultramodern scenario, low power, less cost and reduced storage devices are in great
demand. Because the majority devices operate on a remote power supply, low-power …
demand. Because the majority devices operate on a remote power supply, low-power …
Ambipolarity suppressed dual-material double-source T-shaped tunnel field-effect transistor
This article proposes a novel dual-material double-source T-shaped tunnel field-effect
transistor (TFET) to suppress the ambipolar current conduction. The use of two sources in …
transistor (TFET) to suppress the ambipolar current conduction. The use of two sources in …
Performance investigation of source delta-doped vertical nanowire TFET
In this paper, a source delta-doped vertical nanowire tunnel field-effect transistor is
proposed, and its 2D simulations using the Silvaco ATLAS TCAD tool for ultralow-power …
proposed, and its 2D simulations using the Silvaco ATLAS TCAD tool for ultralow-power …
Era of Sentinel Tech: Charting Hardware Security Landscapes through Post-Silicon Innovation, Threat Mitigation and Future Trajectories
To meet the demanding requirements of VLSI design, including improved speed, reduced
power consumption, and compact architectures, various IP cores from trusted and untrusted …
power consumption, and compact architectures, various IP cores from trusted and untrusted …
Analysis of Negative Capacitance Source Pocket Double-Gate TFET with Steep Subthreshold and High ON–OFF Ratio
This article presents a study on the subthreshold swing (SS) and the ON–OFF current ratio of
a negative capacitance source pocket double-gate tunnel field-effect transistor (NC-SP …
a negative capacitance source pocket double-gate tunnel field-effect transistor (NC-SP …