After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …

Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …

In this work, scalable fabrication of self-assembled GeSn vertical nanowires (NWs) based on
rapid thermal annealing (RTA) and inductively coupled-plasma (ICP) dry etching was …

Wearable electrochemical sensors have attracted great interest in health care applications
because of their flexibility, biocompatibility, low cost and light weight. This review briefly …

Abstract Direct-band-gap Germanium-Tin alloys (Ge 1-x Sn x) with high carrier mobilities are
promising materials for nano-and optoelectronics. The concentration of open volume defects …

The application of strain into GeSn alloys can effectively modulate the band structures, thus
creating novel electronic and photonic devices. Raman spectroscopy is a powerful tool for …

We calculate the electronic structures of Germanium nanowires by taking the effective-mass
theory. The electron and hole states at the Γ-valley are studied via the eight-band kp theory …

Abstract Germanium tin (Ge 1-x Sn x) is one of the most promising materials for various
types of electronic devices, optoelectronic devices and so on. From the application view …

We report polarized Raman scattering results of Ge1− ySny (0≤ y≤ 0.09) epitaxial layers
grown on Ge‐buffered Si substrates. Polarized Raman spectra from the sample surfaces …

Flexible optoelectronics have been regarded as one of the most promising candidates for
wearable and healthcare applications. Among them, flexible near infrared (NIR) …