Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …

A spin-transfer torque switched magnetic tunnel junction (MTJ) is a memory element in
modern magnetic random access memory (MRAM), a CMOS-integrated technology that is …

We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by
spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the …

We demonstrate magnetic droplet soliton pairs in all-perpendicular spin-torque nano-
oscillators (STNOs), where one droplet resides in the STNO free layer (FL) and the other in …

Neuromorphic computing based on brain-inspired frameworks has shown its potential to
perform computation with remarkable power and speed efficiency. The spintronic device has …

Probabilistic bits (p-bits) with thermal-and spin torque-induced nondeterministic
magnetization switching are promising candidates for performing probabilistic computing …

Back hop** or telegraphic switching describes stochastic bistate oscillation in magnetic
tunnel junctions (MTJ) at high bias, which significantly increases the write error rate of …

Handbook of Magnetic Materials, Volume 26, covers the expansion of magnetism over the
last few decades and its applications in research, notably the magnetism of several classes …

In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the
spin drift–diffusion model to address the back-hop** effect. This issue manifests as …

A spin-transfer torque (STT) switched magnetic tunnel junction (MTJ) enables modern
magnetic random access memory (MRAM). Optimization of perpendicularly magnetized MTJ …