A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs
N Choudhury, S Mahapatra - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
Gate-all-around stacked nano-sheet (GAA-SNS) p-channel field effect transistors (FETs)
having varying sheet widths are utilized for ultrafast measurements (delay) of negative bias …
having varying sheet widths are utilized for ultrafast measurements (delay) of negative bias …
Reliability of Tunneling Regime for Silicon on Insulator-Based Neuron
Low-power operations are essential for implementing large spiking neural networks (SNNs)
in real-world applications. An area and energy-efficient demonstration of a functional liquid …
in real-world applications. An area and energy-efficient demonstration of a functional liquid …
Modeling of HCD Kinetics Under Full VG – VD Space, Different Experimental Conditions and Across Different Device Architectures
A SPICE compatible compact modeling framework is discussed for Hot Carrier Degradation
(HCD) stress spanning the entire drain (VD) and gate (VG) voltage space and wide range of …
(HCD) stress spanning the entire drain (VD) and gate (VG) voltage space and wide range of …