Abstract Knowledge about the temperature dependence of the fundamental band-gap
energy of semiconductors is very important and constitutes the basis for develo** …

The presence of defects in the narrow gap semiconductors GaSb and InSb affects their
dopability and hence applicability for a range of optoelectronic applications. Here, we report …

Photoreflectance measurements were performed for GaAs 1− x− y N x Bi y layers in the
temperature range of 20–300 K. For each sample a transition related to the band-gap was …

We have developed a 10-and 14-band anticrossing (BAC) models to investigate the band
structures of dilute nitrides and dilute bismides alloys. In fact, the addition of Bi or N to III-V …

The intriguing potential of III-VN-Bi materials like InSbNBi can lead to pervasive research
curiosity in the long wavelength infrared (LWIR) regime. In this article, we have explored …

ZnS 1-x O x is a highly mismatched semiconductor alloy with potential light-emitting and
solar-cell applications. In this work, optical transmission spectroscopy and a modified …

The photoreflectance method, ie, a contactless version of optical modulation spectroscopy is
applied to the study of the band structure features of single-crystal semiconductors, their …

A 10-band kp model has been adopted to study the electronic transport properties of dilute III–
V-nitride alloys. The N incorporation into III–V material causes a significant band gap …

Фотоотражение–бесконтактная разновидность модуляционной оптической
спектроскопии–применяется для исследования особенностей зонной структуры …