Recent developments have introduced a groundbreaking form of collinear magnetism
known as “altermagnetism”. This emerging magnetic phase is characterized by robust time …

Spintronics aims to go beyond the charge-based paradigm of silicon-based microelectronics
by utilizing the spin degree of freedom for memory, storage and computing applications …

Neuromorphic computing using nonvolatile memories is expected to tackle the memory wall
and energy efficiency bottleneck in the von Neumann system and to mitigate the stagnation …

Antiferromagnetic spintronics have attracted wide attention due to its great potential in
constructing ultradense and ultrafast antiferromagnetic memory that suits modern high …

The memristor is a resistive switch where its resistive state is programable based on the
applied voltage or current. Memristive devices are thus capable of storing and computing …

Efficient generation of spin–orbit torques is central for the exciting field of spin-orbitronics.
Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider …

The orbital Hall effect in light materials has attracted considerable attention for develo**
orbitronic devices. Here we investigate the orbital torque efficiency and demonstrate the …

Out-of-plane spin polarization σ z has attracted increasing interests of researchers recently,
due to its potential in high-density and low-power spintronic devices. Noncollinear …

Current-induced spin torques provide efficient data writing approaches for magnetic
memories. Recently, the spin splitting torque (SST) was theoretically predicted, which …

Perpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net
magnetization and high thermal stability as well as easy reading and writing characteristics …