STT-MRAM sensing: a review
This brief presents a review of developments in spin-transfer-torque magnetoresistive
random access memory (STT-MRAM) sensing over the past 20 years from a circuit design …
random access memory (STT-MRAM) sensing over the past 20 years from a circuit design …
A scaling roadmap and performance evaluation of in-plane and perpendicular MTJ based STT-MRAMs for high-density cache memory
This paper explores the scalability of in-plane and perpendicular MTJ based STT-MRAMs
from 65 nm to 8 nm while taking into consideration realistic variability effects. We focus on …
from 65 nm to 8 nm while taking into consideration realistic variability effects. We focus on …
A 1Mb 28nm STT-MRAM with 2.8 ns read access time at 1.2 V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination
1T1R spin-transfer-torque (STT) MRAM is a promising candidate for next-generation high-
density embedded non-volatile memory [1-2]. However, 1T1R STT-MRAM suffers from …
density embedded non-volatile memory [1-2]. However, 1T1R STT-MRAM suffers from …
Sensing circuit design techniques for RRAM in advanced CMOS technology nodes
D Zhang, B Peng, Y Zhao, Z Han, Q Hu, X Liu, Y Han… - Micromachines, 2021 - mdpi.com
Resistive random access memory (RRAM) is one of the most promising new nonvolatile
memories because of its excellent properties. Moreover, due to fast read speed and low …
memories because of its excellent properties. Moreover, due to fast read speed and low …
A 1-Mb 28-nm 1T1MTJ STT-MRAM With Single-Cap Offset-Cancelled Sense Amplifier and In Situ Self-Write-Termination
1T1MTJ spin-transfer-torque (STT)-MRAM is a promising candidate for next-generation high-
density embedded non-volatile memory. This paper presents a 1-Mb 28-nm 1T1MTJ STT …
density embedded non-volatile memory. This paper presents a 1-Mb 28-nm 1T1MTJ STT …
Asymmetry of MTJ switching and its implication to STT-RAM designs
As one promising candidate for next-generation nonvolatile memory technologies, spin-
transfer torque random access memory (STT-RAM) has demonstrated many attractive …
transfer torque random access memory (STT-RAM) has demonstrated many attractive …
A ReRAM-based nonvolatile flip-flop with self-write-termination scheme for frequent-off fast-wake-up nonvolatile processors
Nonvolatile flip-flops (nvFFs) enable frequent-off processors to achieve fast power-off and
wake-up time while maintaining critical local computing states through parallel data …
wake-up time while maintaining critical local computing states through parallel data …
A 1 Mb nonvolatile embedded memory using 4T2MTJ cell with 32 b fine-grained power gating scheme
<? Pub Dtl=""?> A 1 Mb nonvolatile embedded memory using a four transistor and two spin-
transfer-torque (STT) magnetic tunnel junction (MTJ) cell is designed and fabricated to …
transfer-torque (STT) magnetic tunnel junction (MTJ) cell is designed and fabricated to …
A 130 nm 1.2 V/3.3 V 16 Kb spin-transfer torque random access memory with nondestructive self-reference sensing scheme
Among all the emerging memories, Spin-Transfer Torque Random Access Memory (STT-
RAM) has demonstrated many promising features such as fast access speed, nonvolatility …
RAM) has demonstrated many promising features such as fast access speed, nonvolatility …
Survey of STT-MRAM cell design strategies: Taxonomy and sense amplifier tradeoffs for resiliency
Spin-Transfer Torque Random Access Memory (STT-MRAM) has been explored as a post-
CMOS technology for embedded and data storage applications seeking non-volatility, near …
CMOS technology for embedded and data storage applications seeking non-volatility, near …