Recently developed high-permittivity (k) materials have reopened the door to Ge as a
channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge …

▪ Abstract With the rapidly changing materials needs of modern microelectronics, germanium
provides an opportunity for future-generation devices. Controlling germanium interfaces will …

In situ and ex situ oxidation studies are carried out on Ge (100) and Ge (111) employing
techniques of ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS). In situ …

Germanium nanowires (GeNWs) with p-and n-dopants were synthesized by chemical vapor
deposition (CVD) and were used to construct complementary field-effect transistors (FETs) …

From the studies on the thermal desorption behaviors of GeO 2 film and its impact on the
electrical properties of GeO 2/Ge metal–insulator–semiconductor (MIS) capacitors, it was …

A wet chemical preparation involving de-ionized water, hydrogen peroxide, and hydrofluoric
acid is used to passivate germanium (Ge)(100) surfaces. Infrared absorption spectroscopy …

Scaling of the gate stack has been a key to enhancing the performance of complementary
metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) of past technology …

Gold surfaces have been found to be hydrophilic only after exhaustive preparation and with
the ultimate care in sample preparation and treatment. The use of a combination of …

This paper reviews progress and current critical issues with respect to the integration of
germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel …

This book is the first to present comprehensive, state-of-the-art coverage of 2D materials and
their nanoelectronic applications. Comprised of chapters authored by world-renowned …