Investigation of Si IGBT Operation at 200C for Traction Applications
In order to satisfy the high-density requirement and harsh thermal conditions while reducing
cost in future electric and hybrid electric vehicles (HEV), a systematic study of a 1200-V …
cost in future electric and hybrid electric vehicles (HEV), a systematic study of a 1200-V …
Modeling of the SiO2/SiC Interface-Trapped Charge as a Function of the Surface Potential in 4H-SiC Vertical-DMOSFET
A new analytical description of the trapped charge distribution at the semiconductor-
insulator interface of 4H-SiC vertical-DMOSFET has been derived as a function of the …
insulator interface of 4H-SiC vertical-DMOSFET has been derived as a function of the …
Analytical model of the forward operation of 4H-SiC vertical DMOSFET in the safe operating temperature range
GD Licciardo, S Bellone… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
A new analytical model of 4H-SiC DMOSFETs that is useful to explore their thermal stability
is presented. The model is capable to describe, with closed-form equations, the dc forward …
is presented. The model is capable to describe, with closed-form equations, the dc forward …
Real-time system-on-chip emulation of electrothermal models for power electronic devices via Hammerstein configuration
Real-time emulation of device-level power electronics plays an essential role in many
industrial applications for design and hardware-in-the-loop testing of system components …
industrial applications for design and hardware-in-the-loop testing of system components …
[PDF][PDF] Wide bandgap (SiC/GaN) power devices characterization and modeling: Application to HF power converters
F FOREST - 2014 - pepite-depot.univ-lille.fr
After three years' work on this dissertation, it is the time to express my sincere gratitudes to
all the people who helped me, who worked together with me, who guided me, who always …
all the people who helped me, who worked together with me, who guided me, who always …
Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dI /dt and Temperature
SiC Schottky Barrier diodes (SiC SBD) are known to oscillate/ring in the output terminal
when used as free-wheeling diodes in voltage-source converters. This ringing is due to RLC …
when used as free-wheeling diodes in voltage-source converters. This ringing is due to RLC …
A model of the off-behaviour of 4H–SiC power JFETs
A physical model of the off-behaviour of Vertical Junction Field Effect Transistors (VJFETs)
up to their blocking voltage limit is presented. Since the drain current, ID, of these devices …
up to their blocking voltage limit is presented. Since the drain current, ID, of these devices …
On the crossing-point of 4H-SiC power diodes characteristics
The presence of crossing points in the forward JD-VD curves of 4H-SiC pin diodes is
analyzed by means of numerical and analytical models. The analysis allows one to justify …
analyzed by means of numerical and analytical models. The analysis allows one to justify …
Design and performances of 4H-SiC bipolar mode field effect transistor (BMFETs)
S Bellone, L Di Benedetto - IEEE transactions on power …, 2013 - ieeexplore.ieee.org
An original design of 4H polytype of silicon carbide (4H-SiC) bipolar-mode field-effect
transistors (BMFETs), which combines the on-state operation of silicon version with the off …
transistors (BMFETs), which combines the on-state operation of silicon version with the off …
A Model of the $ I_ {\bm D}{-} V_ {{\bf GS}} $ Characteristics of Normally OFF 4H-SiC Bipolar JFETs
S Bellone, L Di Benedetto - IEEE transactions on power …, 2013 - ieeexplore.ieee.org
The first analytical model of the transfer characteristics of normally OFF JFETs devices is
presented. The model exploits an original description of carrier distributions in the channel …
presented. The model exploits an original description of carrier distributions in the channel …