Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices
The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …
interconnects as well as the modulation techniques allow the present day society to …
Bandedge-engineered quantum well laser
A promising type of quantum well (QW) lasers is discussed—bandedge-engineered (BE)
QW lasers. The use of two asymmetric barrier layers (one on each side of the QW) in such …
QW lasers. The use of two asymmetric barrier layers (one on each side of the QW) in such …
Output power of a double tunneling-injection quantum dot laser
DS Han, LV Asryan - Nanotechnology, 2009 - iopscience.iop.org
We develop a comprehensive theoretical model for a double tunneling-injection (DTI)
quantum dot (QD) laser. Both electrons and holes are injected into QDs by tunneling from …
quantum dot (QD) laser. Both electrons and holes are injected into QDs by tunneling from …
Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier
The process of tunneling injection is known to improve the dynamical characteristics of
quantum well and quantum dot lasers; in the latter, it also improves the temperature …
quantum well and quantum dot lasers; in the latter, it also improves the temperature …
Room temperature free carrier tunneling in dilute nitride based quantum well-quantum dot tunnel injection system for 1.3 μm
We present optical studies of quantum dot tunnel injection structures for 1.3 μ m emission
with an InGaAsN quantum well injector. Photoreflectance spectroscopy supported by …
with an InGaAsN quantum well injector. Photoreflectance spectroscopy supported by …
Interplay of structural design and interaction processes in tunnel-injection semiconductor lasers
Tunnel-injection lasers promise various advantages in comparison to conventional laser
designs. In this paper, the physics of the tunnel-injection process is studied within a …
designs. In this paper, the physics of the tunnel-injection process is studied within a …
Effect of pum** delay on the modulation bandwidth in double tunneling-injection quantum dot lasers
LV Asryan - Optics letters, 2016 - opg.optica.org
The modulation bandwidth of double tunneling-injection (DTI) quantum dot (QD) lasers is
studied, taking into account noninstantaneous pum** of QDs. In this advanced type of …
studied, taking into account noninstantaneous pum** of QDs. In this advanced type of …
Modulation bandwidth of a double tunnelling-injection quantum dot laser
LV Asryan - Semiconductor Science and Technology, 2015 - iopscience.iop.org
The modulation response of a double tunnelling-injection (DTI) quantum dot (QD) laser is
studied. Closed-form expressions are obtained for the dynamic characteristics of the laser …
studied. Closed-form expressions are obtained for the dynamic characteristics of the laser …
Experimental evidence on quantum well–quantum dash energy transfer in tunnel injection structures for 1.55 μm emission
Here comes a report on the investigation of the energy transfer in InP-based tunnel injection
structures, consisting of In As∕ In Al Ga As quantum dashes (QDashes) and an In Ga As∕ …
structures, consisting of In As∕ In Al Ga As quantum dashes (QDashes) and an In Ga As∕ …
Modulation bandwidth of double tunneling-injection quantum dot lasers: Effect of out-tunneling leakage
LV Asryan, S Kar - IEEE Journal of Quantum Electronics, 2018 - ieeexplore.ieee.org
The effect of out-tunneling leakage of carriers from quantum dots (QDs) on modulation
bandwidth of semiconductor double tunneling-injection (DTI) QD lasers is studied. In this …
bandwidth of semiconductor double tunneling-injection (DTI) QD lasers is studied. In this …