This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

The use of single molecules in electronics represents the next limit of miniaturisation of
electronic devices, which would enable us to continue the trend of aggressive downscaling …

The ability to build structures with atomic precision is one of the defining features of
nanotechnology. Achieving true atomic-level functionality, however, requires the ability to …

A scaled quantum computer with donor spins in silicon would benefit from a viable
semiconductor framework and a strong inherent decoupling of the qubits from the noisy …

Silicon field-effect transistors have now reached gate lengths of only a few tens of
nanometers, containing a countable number of dopants in the channel. Such technological …

Adiabatic shuttling of single impurity bound electrons to gate-induced surface states in
semiconductors has attracted much attention in recent times, mostly in the context of solid …

Donor‐atom‐based nano‐devices in silicon represent a breakthrough for individual control
of electrons at atomic scale. Here, a finite‐bias characterization of electrical transport …

The boom of semiconductor quantum computing platforms created a demand for computer-
aided design and fabrication of quantum devices. Path-integral Monte Carlo (PIMC) can …

We present a complete theoretical treatment of Stark effects in bulk doped silicon, whose
predictions are supported by experimental measurements. A multivalley effective mass …

Physical systems reach thermal equilibrium through energy exchange with their
environment, and for spins in solids the relevant environment is almost always their host …