Several industrial applications require specific electronic systems installed in harsh
environments to perform measurements, monitoring, and control tasks such as in space …

New requirements on post-accident monitoring systems in nuclear power plants pose fresh
challenges for electronic system designers and nuclear power plant personnel, in particular …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …

“Extreme environment” electronics represent an important niche market in the trillion dollar
global electronics industry and span the operation of electronic circuits and systems in …

The effect of bias condition on total ionizing dose (TID) of Silicon–Germanium heterojunction
bipolar transistors (SiGe HBTs) is investigated. The SiGe HBTs are set at forward, saturated …

This work presents the characteristics of the single event transient (SET) induced by a single
heavy ion in the inverse mode NPN-SiGe HBT simulated with the Silvaco TCAD toolkit. The …

The advantages and the tradeoffs associated with the use of inverse-mode (IM) silicon–
germanium (SiGe) heterojunction bipolar transistors (HBTs) biasing circuitry in radio …

The total ionizing dose response of 4th-generation SiGe HBTs is assessed at both low and
high dose rates to evaluate enhanced low dose rate sensitivity (ELDRS) in a new SiGe …

This paper presents an investigation of the impact of single-event transients (SETs) and total
ionization dose (TID) on precision voltage reference circuits designed in a fourth-generation …