In the current information age, the realization of memory devices with energy efficient
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …

Oxide-based resistive switching devices, including ferroelectric tunnel junctions and
resistance random access memory, are promising candidates for the next-generation non …

Ferroelectric Hf0. 5Zr0. 5O2 (HZO) thin films have attracted wide attention in terms of
potential applications of nonvolatile ferroelectric memories. However, the effect of strain on …

Group-IV monochalcogenides have attracted much attention due to their potential of
ferroelectric and multiferroic properties. Recently, centrosymmetric γ-phase GeSe in a …

Single‐phase multiferroics suffer from a fundamental contradiction between polarity and
magnetism in d0 electronic configuration, motivating studies of unconventional …

The fabrication and transfer of freestanding single-crystal ferroelectric membranes deserve
intensive investigations as to their potential applications in flexible wearable devices, such …

Flexible electronics have attracted long-standing attention in today's energy-conscious
world. Among the flexible electronics, the flexible ferroelectric tunnel junction can realize …

The strain-induced polarization in a piezoelectric semiconductor is an effective strategy to
modulate its current transport. However, the piezoelectricity is degraded by the free charges …

Recently, complementary resistive switches (CRSs) have attracted considerable attention
because of the effective suppression of the sneak leakage that is an inherent problem of …

Deterministic switching of polarization vortices in ferroelectrics by a uniaxial mechanical
load is challenging. Here, we demonstrate, by using phase field simulations and ferroelectric …