One of the fundamental properties of semiconductors is their ability to support highly tunable
electric currents in the presence of electric fields or carrier concentration gradients. These …

We present a systematic study of strain effects on the electronic band structure of the group-
III-nitrides (AlN, GaN and InN) in the wurtzite phase. The calculations are based on density …

We present the theoretical and experimental results for the electronic and optical properties
of atomically thin (1 and 2 monolayers) GaN quantum wells with AlN barriers. Strong …

Nitride semiconductors are ubiquitous in optoelectronic devices such as LEDs and Blu-Ray
optical disks. A major limitation for further adoption of GaN in power electronics is its low …

We develop an open-source python workflow package, py GWBSE to perform automated
first-principles calculations within the GW-BSE (Bethe-Salpeter) framework. GW-BSE is a …

A thorough understanding of electrical and thermal transport properties of group-III nitride
semiconductors is essential for their electronic and thermoelectric applications. Despite …

BAs is a III–V semiconductor with ultra-high thermal conductivity, but many of its electronic
properties are unknown. This work applies predictive atomistic calculations to investigate the …

Temperature-dependent effective mass in AlGaN/GaN heterostructures was experimentally
observed via THz time domain spectroscopy of 2D plasmons in the range of 80–300 K …

Electron charges and distribution profiles induced by polarization gradients at the interfaces
of pseudomorphic, hexagonal Sc x Al 1− x N/GaN-and Sc x Al 1− x N/InN-heterostructures …

We present a methodology to calculate radiative carrier capture coefficients at deep defects
in semiconductors and insulators from first principles. Electronic structure and lattice …