Overview of band-edge and defect related luminescence in aluminum nitride

T Koppe, H Hofsäss, U Vetter - Journal of Luminescence, 2016 - Elsevier
This review gives the reader an overview of the published results describing near band-
edge as well as defect related luminescence in aluminum nitride, also presenting findings …

[HTML][HTML] Defect control strategies for Al1− xGdxN alloys

CW Lee, NU Din, K Yazawa, W Nemeth… - Journal of Applied …, 2024 - pubs.aip.org
Tetrahedrally bonded III-N and related alloys are useful for a wide range of applications from
optoelectronics to dielectric electromechanics. Heterostructural AlN-based alloys offer …

High Quantum Efficiency Rare-Earth-Doped Gd2O2S:Tb, F Scintillators for Cold Neutron Imaging

B Tang, W Yin, Q Wang, L Chen, H Huo, Y Wu, H Yang… - Molecules, 2023 - mdpi.com
High-resolution neutron radiography provides novel and stirring opportunities to investigate
the structures of light elements encased by heavy elements. For this study, a series of …

Mn2+-Based Codopant Phosphor System: Fundamentals and Some Representatives

S Adachi - ECS Journal of Solid State Science and Technology, 2024 - iopscience.iop.org
The purpose of this review article is to discuss the photoluminescence properties of Mn 2+-
activated phosphors codoped with a wide variety of ions. Even though the concepts of intra …

Synthesis and Calculations of Wurtzite Al1–xGdxN Heterostructural Alloys

RW Smaha, K Yazawa, AG Norman… - Chemistry of …, 2022 - ACS Publications
Al1–x Gd x N is one of a series of novel heterostructural alloys involving rare earth cations
with potentially interesting properties for (opto) electronic, magnetic, and neutron detector …

Effect of Gd implantation on the structural and magnetic properties of GaN and AlN

SY Han, J Hite, GT Thaler, RM Frazier… - Applied Physics …, 2006 - pubs.aip.org
Gd+ ions were implanted at total doses of 3–6× 10 14 cm 2 into single-crystal GaN or AlN
epilayers grown on sapphire substrates and annealed at 700–1000 C⁠. The implanted Gd …

Cathodoluminescence of rare earth implantedGa2O3 andGeO2 nanostructures

E Nogales, P Hidalgo, K Lorenz, B Méndez… - …, 2011 - iopscience.iop.org
Rare earth (RE) doped gallium oxide and germanium oxide micro-and nanostructures,
mostly nanowires, have been obtained and their morphological and optical properties have …

Luminescence and Location of Gd3+ or Tb3+ Ions in Perovskite-Type LaScO3

K Ueda, T Aoki, Y Shimizu, F Massuyeau… - Inorganic …, 2018 - ACS Publications
The luminescence properties of Gd3+ or Tb3+ ions at La and Sc sites were investigated in
LaScO3 with a distorted perovskite-type structure (ABO3). Although the luminescence of …

Synthesis, characterization, and photoluminescence properties of Gd: Tb oxysulfide colloidal particles

L Hernández-Adame, A Méndez-Blas… - Chemical Engineering …, 2014 - Elsevier
Terbium-doped gadolinium oxysulfide (Gd 2 O 2 S: Tb 3+) nanoparticles were synthesized
by using a hydrothermal method followed with a sulfur reaction. We studied parameters such …

Spectroscopic analysis of Eu3+ in single-crystal hexagonal phase AlN

JB Gruber, U Vetter, T Taniguchi, GW Burdick… - Journal of Applied …, 2011 - pubs.aip.org
A detailed spectroscopic analysis of the crystal-field splitting of the energy levels of Eu 3+(4f
6) in single crystals of hexagonal phase aluminum nitride is reported based on assignments …