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Overview of band-edge and defect related luminescence in aluminum nitride
T Koppe, H Hofsäss, U Vetter - Journal of Luminescence, 2016 - Elsevier
This review gives the reader an overview of the published results describing near band-
edge as well as defect related luminescence in aluminum nitride, also presenting findings …
edge as well as defect related luminescence in aluminum nitride, also presenting findings …
[HTML][HTML] Defect control strategies for Al1− xGdxN alloys
Tetrahedrally bonded III-N and related alloys are useful for a wide range of applications from
optoelectronics to dielectric electromechanics. Heterostructural AlN-based alloys offer …
optoelectronics to dielectric electromechanics. Heterostructural AlN-based alloys offer …
High Quantum Efficiency Rare-Earth-Doped Gd2O2S:Tb, F Scintillators for Cold Neutron Imaging
B Tang, W Yin, Q Wang, L Chen, H Huo, Y Wu, H Yang… - Molecules, 2023 - mdpi.com
High-resolution neutron radiography provides novel and stirring opportunities to investigate
the structures of light elements encased by heavy elements. For this study, a series of …
the structures of light elements encased by heavy elements. For this study, a series of …
Mn2+-Based Codopant Phosphor System: Fundamentals and Some Representatives
S Adachi - ECS Journal of Solid State Science and Technology, 2024 - iopscience.iop.org
The purpose of this review article is to discuss the photoluminescence properties of Mn 2+-
activated phosphors codoped with a wide variety of ions. Even though the concepts of intra …
activated phosphors codoped with a wide variety of ions. Even though the concepts of intra …
Synthesis and Calculations of Wurtzite Al1–xGdxN Heterostructural Alloys
Al1–x Gd x N is one of a series of novel heterostructural alloys involving rare earth cations
with potentially interesting properties for (opto) electronic, magnetic, and neutron detector …
with potentially interesting properties for (opto) electronic, magnetic, and neutron detector …
Effect of Gd implantation on the structural and magnetic properties of GaN and AlN
Gd+ ions were implanted at total doses of 3–6× 10 14 cm 2 into single-crystal GaN or AlN
epilayers grown on sapphire substrates and annealed at 700–1000 C. The implanted Gd …
epilayers grown on sapphire substrates and annealed at 700–1000 C. The implanted Gd …
Cathodoluminescence of rare earth implantedGa2O3 andGeO2 nanostructures
Rare earth (RE) doped gallium oxide and germanium oxide micro-and nanostructures,
mostly nanowires, have been obtained and their morphological and optical properties have …
mostly nanowires, have been obtained and their morphological and optical properties have …
Luminescence and Location of Gd3+ or Tb3+ Ions in Perovskite-Type LaScO3
K Ueda, T Aoki, Y Shimizu, F Massuyeau… - Inorganic …, 2018 - ACS Publications
The luminescence properties of Gd3+ or Tb3+ ions at La and Sc sites were investigated in
LaScO3 with a distorted perovskite-type structure (ABO3). Although the luminescence of …
LaScO3 with a distorted perovskite-type structure (ABO3). Although the luminescence of …
Synthesis, characterization, and photoluminescence properties of Gd: Tb oxysulfide colloidal particles
L Hernández-Adame, A Méndez-Blas… - Chemical Engineering …, 2014 - Elsevier
Terbium-doped gadolinium oxysulfide (Gd 2 O 2 S: Tb 3+) nanoparticles were synthesized
by using a hydrothermal method followed with a sulfur reaction. We studied parameters such …
by using a hydrothermal method followed with a sulfur reaction. We studied parameters such …
Spectroscopic analysis of Eu3+ in single-crystal hexagonal phase AlN
A detailed spectroscopic analysis of the crystal-field splitting of the energy levels of Eu 3+(4f
6) in single crystals of hexagonal phase aluminum nitride is reported based on assignments …
6) in single crystals of hexagonal phase aluminum nitride is reported based on assignments …