Extreme ultraviolet (EUV) lithography (13.5 nm) is the newest technology that allows high-
throughput fabrication of electronic circuitry in the sub-20 nm scale. It is commonly assumed …

The blur caused by the nonzero mean free path of electrons in photoresists exposed by
extreme ultraviolet lithography has detrimental consequences on patterning resolution, but …

The potential implementation of extreme ultraviolet (EUV) lithography into next generation
device processing is bringing urgency to identify resist materials that optimize EUV …

Spectroscopy of correlated electron pairs was employed to investigate the energy
dissipation process, as well as the transport and the emission of low-energy electrons on a …

Outstanding technology innovations have continuously allowed photolithography to remain
at the forefront of semiconductor manufacturing for decades. New materials and processes …

Optimizing the photochemistry of extreme ultraviolet (EUV) photoresists can lead to faster,
more efficient resists needed for implementation of EUV lithography into high volume …

In extreme ultraviolet (EUV) lithography, 92 eV photons are used to expose photoresists.
Typical EUV resists are organic-based and chemically amplified using photoacid generators …

Extreme ultraviolet (EUV,~ 13.5 nm) lithography is the prospective technology for high
volume manufacturing by the microelectronics industry. Significant strides towards achieving …

Indium nitrate hydrate films are evaluated as potential extreme ultraviolet (EUV) resists. The
uniformity and stability of indium nitrate-based sol-gel precursor films are studied as a …

Optimizing the photochemistry in extreme ultraviolet (EUV) photoresists due to EUV
exposures may enable faster, more efficient resists, leading to a greater throughput in …