Radiation tolerance is determined as the ability of crystalline materials to withstand the
accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences …

Atomic scale details of the formation of point defects and their evolution to phase
transformation in silicon (Si) implanted β-Ga 2 O 3 were studied using high resolution …

Ion implantation induced phase transformation and the crystal structure of a series of ion
implanted β-Ga 2 O 3 samples were studied using electron diffraction, high resolution …

Gallium oxide (Ga2O3) has attracted extensive attention as a potential candidate for low-
dimensional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its wide …

Lightly n-type β-Ga 2 O 3 grown by Halide Vapor Phase Epitaxy (HVPE) on heavily n-type
doped β-Ga 2 O 3 substrate was implanted with 1 MeV O ions to a fluence of 10 16 cm− 2 …

RE-doped β-Ga2O3 seems attractive for future high-power LEDs operating in high
irradiation environments. In this work, we pay special attention to the issue of radiation …

Nominally phase-pure γ-Ga 2 O 3 was deposited on (100) MgAl 2 O 4 within a narrow
temperature window centered at∼ 470 C using metal-organic chemical vapor deposition …

β-Ga2O3 is a promising ultrawide bandgap semiconductor for next-generation power
electronics, but the unintended formation of γ-Ga2O3 in β-Ga2O3 crystals has been …

Atomic resolution scanning/transmission electron microscopy (S/TEM) and energy-
dispersive x-ray (EDX) analysis were used to determine the effects of annealing at 800 …

Ion beam fabrication of metastable polymorphs of Ga 2 O 3, assisted by the controllable
accumulation of the disorder in the lattice, is an interesting alternative to conventional …