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Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
G Dingemans, WMM Kessels - … of Vacuum Science & Technology A, 2012 - pubs.aip.org
The reduction in electronic recombination losses by the passivation of silicon surfaces is a
critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al 2 O 3) nanolayers …
critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al 2 O 3) nanolayers …
Progress in solar cells from hydrogenated amorphous silicon
Hydrogenated amorphous silicon (a-Si: H) has been used for decades—doped and as
intrinsic absorber layers—in thin-film silicon solar cells. Whereas their effiency was improved …
intrinsic absorber layers—in thin-film silicon solar cells. Whereas their effiency was improved …
27.09%-efficiency silicon heterojunction back contact solar cell and going beyond
Crystalline-silicon heterojunction back contact solar cells represent the forefront of
photovoltaic technology, but encounter significant challenges in managing charge carrier …
photovoltaic technology, but encounter significant challenges in managing charge carrier …
Industrial-scale deposition of nanocrystalline silicon oxide for 26.4%-efficient silicon heterojunction solar cells with copper electrodes
C Yu, K Gao, CW Peng, C He, S Wang, W Shi, V Allen… - Nature Energy, 2023 - nature.com
To unlock the full performance potential of silicon heterojunction solar cells requires
reductions of parasitic absorption and shadowing losses. Yet the translation of the …
reductions of parasitic absorption and shadowing losses. Yet the translation of the …
25.11% efficiency silicon heterojunction solar cell with low deposition rate intrinsic amorphous silicon buffer layers
X Ru, M Qu, J Wang, T Ruan, M Yang, F Peng… - Solar energy materials …, 2020 - Elsevier
Here we report a certified efficiency of up to 25.11% for silicon heterojunction (SHJ) solar
cells on a full size n-type M2 monocrystalline-silicon (c-Si) wafer (total area, 244.5 cm 2). An …
cells on a full size n-type M2 monocrystalline-silicon (c-Si) wafer (total area, 244.5 cm 2). An …
Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering
Damage of the hydrogenated amorphous/crystalline silicon interface passivation during
transparent conductive oxide sputtering is reported. This occurs in the fabrication process of …
transparent conductive oxide sputtering is reported. This occurs in the fabrication process of …
Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent
passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si: H) layers …
passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si: H) layers …
Nature of doped a-Si: H/c-Si interface recombination
Doped hydrogenated amorphous silicon (a-Si: H) films of only a few nanometer thin find
application in a-Si: H/crystalline silicon heterojunction solar cells. Although such films may …
application in a-Si: H/crystalline silicon heterojunction solar cells. Although such films may …
Progress on the intrinsic a-Si: H films for interface passivation of silicon heterojunction solar cells: A review
Amorphous/crystalline silicon heterojunction (SHJ) solar cells are well known for their
inherent high open-circuit voltage (V OC) potential, much better temperature coefficient …
inherent high open-circuit voltage (V OC) potential, much better temperature coefficient …
Effects of (i)a‐Si:H deposition temperature on high‐efficiency silicon heterojunction solar cells
Excellent surface passivation induced by (i) a‐Si: H is critical to achieve high‐efficiency
silicon heterojunction (SHJ) solar cells. This is key for conventional single‐junction cell …
silicon heterojunction (SHJ) solar cells. This is key for conventional single‐junction cell …