Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …

Results of investigations into surface processes of the formation of germanium and silicon
nanostructures are analyzed. A mechanism of three-dimensional island nucleation and …

Nanoheterostructures of NiSi/Si/NiSi in which the length of the Si region can be controlled
down to 2 nm have been produced using in situ point contact reaction between Si and Ni …

The formation of CoSi and CoSi2 in Si nanowires at 700 and 800° C, respectively, by point
contact reactions between nanodots of Co and nanowires of Si have been investigated in …

Direct in situ optical and photoelectron emission microscopy observations of the nucleation
and growth of VO2 meso-and nanostructures using thermal transport of V2O5 precursor in a …

Long-range interface correlations in C/Au/C and Ag/Si 3 N 4 layered films consisting of metal
nanoparticles embedded in amorphous matrices are investigated by atomic force …

We investigated the molecular beam epitaxy growth of three-dimensional (3D) Ge quantum
dot crystals (QDCs) on periodically pit-patterned Si substrates. A series of factors influencing …

In the development of nanotechnology, a high-sensitivity temperature sensor is urgently
needed for both fundamental understanding of nanosystems and functional applications …

Создание полупроводниковых структур с новыми физическими свойствами является
основной задачей нанотехнологии, имеющей целью расширение пределов …

We report on intraband photocurrent spectroscopy of dome-shaped GeSi islands embedded
in a Si matrix with n+-type bottom and top Si layers. An in-plane polarized photoresponse in …