Fundamental issues of the kinetics of phase separations on surfaces are reviewed with an
emphasis on developments during the period from 1990 to present. Issues covered …

This article presents an overview of the recent developments in the fundamental
understandings and microelectronics applications of metal silicides. The synthesis and …

The reaction chemistry of H-terminated crystalline Si (111) and Si (100) surfaces in CH3OH,
CD3OD, CF3 (CH2) 3OH, C4H9OH, and C4D9OD solutions containing ferrocenium (Fc+) …

We investigate here the strain-induced growth of Cu at 600° C and its interactions with a
thermally grown, 270 nm-thick SiO2 layer on the Si (111) substrate. Our results show clear …

CoSi 2 clusters on a Si (100) surface grow in a square shape at first, but at a critical size a
shape transition to clusters with large aspect ratios occurs. Each cluster is connected to an …

Gold nanoparticles (Au NPs) were prepared on a native-oxide-covered Si (100) substrate by
sputter-deposition followed by thermal annealing. The size of Au NPs could be controlled in …

When a thin film of Au (∼ 100 nm) deposited under high vacuum conditions on a chemically
prepared Br-passivated Si (111) substrate was annealed around 363° C, epitaxial layer-plus …

Gold mesopyramid structures are formed on Si [1 0 0] by annealing a eutectic promoting
trilayer of Au-Si-Au that enhances their formation. Convex and concave (inverse …

A compact, custom-made molecular beam epitaxy (MBE) system has been installed and a
commercial ultrahigh vacuum scanning tunnelling microscope (STM) has been coupled to …

We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-
organized endotaxial CoSi 2 islands on Si (100) substrates. Nanodots of CoSi 2 grow in the …