Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown
outstanding properties, which has led to their successful use for a long time in optical …

Phase transitions can occur in certain materials such as transition metal oxides (TMOs) and
chalcogenides when there is a change in external conditions such as temperature and …

Phase‐change material (PCM) devices are one of the most mature nonvolatile memories.
However, their high power consumption remains a bottleneck problem limiting the data …

DOI: 10.1002/adma. 201505865 sub-layer atoms seems necessary to complete the
transition, the energy barrier for the vertical atomic motion of Ge dominates the switching …

Phase‐change random access memory is anticipated to break the bottleneck of the “storage
wall” due to its advantages in simultaneous data storage and in‐memory computing …

Chalcogenide phase change materials (PCMs), such as Ge-Sb-Te alloys, have outstanding
properties, which has led to their successful use for a long time in optical memories (DVDs) …

Abstract Ge-Sb-Te alloys are promising materials for non-volatile memory applications.
Alloying of the materials with various elements is considered as prospective approach to …

Non-volatile memory, which can simultaneously store data and compute in memory, is a
promising candidate to break through “memory bottleneck”. However, its operation speed …

Here, Zr-doped Sb 2 Te alloy is proposed for phase change memory (PCM). Zr-do**
enhances the crystallization temperature and thermal stability of Sb 2 Te alloy effectively …

The crystallization mechanisms of prototypical GeTe phase-change material thin films have
been investigated by in situ scanning transmission electron microscopy annealing …