The future of memristors: Materials engineering and neural networks

K Sun, J Chen, X Yan - Advanced Functional Materials, 2021 - Wiley Online Library
Abstract From Deep Blue to AlphaGo, artificial intelligence and machine learning are
booming, and neural networks have become the hot research direction. However, due to the …

A review of resistive switching devices: performance improvement, characterization, and applications

T Shi, R Wang, Z Wu, Y Sun, J An, Q Liu - Small Structures, 2021 - Wiley Online Library
As human society enters the big data era, huge data storage and energy‐efficient data
processing are in great demand. The resistive switching device is an emerging device with …

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F Pan, S Gao, C Chen, C Song, F Zeng - Materials Science and …, 2014 - Elsevier
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Self‐assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors

X Yan, Y Pei, H Chen, J Zhao, Z Zhou… - Advanced …, 2019 - Wiley Online Library
With the advent of the era of big data, resistive random access memory (RRAM) has become
one of the most promising nanoscale memristor devices (MDs) for storing huge amounts of …

A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications

KH Kim, S Gaba, D Wheeler, JM Cruz-Albrecht… - Nano …, 2012 - ACS Publications
Crossbar arrays based on two-terminal resistive switches have been proposed as a leading
candidate for future memory and logic applications. Here we demonstrate a high-density …

Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

R Khan, N Ilyas, MZM Shamim, MI Khan… - Journal of Materials …, 2021 - pubs.rsc.org
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …

Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐dimensional layered materials

Y Li, S Long, Q Liu, H Lv, M Liu - Small, 2017 - Wiley Online Library
Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …

Overview of resistive random access memory (RRAM): Materials, filament mechanisms, performance optimization, and prospects

H Wang, X Yan - physica status solidi (RRL)–Rapid Research …, 2019 - Wiley Online Library
Because conventional nonvolatile memory is limited by process technology and physical
size, resistive random access memory (RRAM) gradually enters the field of view due to its …

Biodegradable natural pectin‐based flexible multilevel resistive switching memory for transient electronics

J Xu, X Zhao, Z Wang, H Xu, J Hu, J Ma, Y Liu - Small, 2019 - Wiley Online Library
Transient electronics that can physically vanish in solution can offer opportunities to address
the ecological challenges for dealing with the rapidly growing electronic waste. As one …

Perovskite-related (CH 3 NH 3) 3 Sb 2 Br 9 for forming-free memristor and low-energy-consuming neuromorphic computing

JM Yang, ES Choi, SY Kim, JH Kim, JH Park, NG Park - Nanoscale, 2019 - pubs.rsc.org
Organic–inorganic halide perovskite materials exhibit excellent memristive properties, such
as a high on/off ratio and low switching voltage. However, most studies have focused on Pb …