Heusler alloys: Past, properties, new alloys, and prospects

S Tavares, K Yang, MA Meyers - Progress in Materials Science, 2023 - Elsevier
Heusler alloys, discovered serendipitously at the beginning of the twentieth century, have
emerged in the twenty-first century as exciting materials for numerous remarkable functional …

Spin-gapless semiconductors for future spintronics and electronics

X Wang, Z Cheng, G Zhang, H Yuan, H Chen, XL Wang - Physics Reports, 2020 - Elsevier
In recent years, spin-gapless semiconductors (SGSs) with parabolic and linear band
dispersions have aroused great interest worldwide in the field of materials science due to …

Inspecting the electronic structure and thermoelectric power factor of novel p-type half-Heuslers

SA Khandy - Scientific Reports, 2021 - nature.com
In line for semiconducting electronic properties, we systematically scrutinize the likely to be
grown half-Heusler compounds XTaZ (X= Pd, Pt and Z= Al, Ga, In) for their stability and …

Thermoelectric properties, phonon, and mechanical stability of new half-metallic quaternary Heusler alloys: FeRhCrZ (Z= Si and Ge)

SA Khandy, JD Chai - Journal of Applied Physics, 2020 - pubs.aip.org
Computer simulations within the framework of density functional theory are performed to
study the electronic, dynamic, elastic, magnetic, and thermoelectric properties of a newly …

Multiple dimensions of spin-gapless semiconducting states in tetragonal

J Wang, H Yuan, Y Liu, X Wang, G Zhang - Physical Review B, 2022 - APS
Spin-gapless semiconductors (SGSs), with intrinsic magnetism, 100% spin polarization, and
zero-gap band crossing points, have attracted great scientific interest owing to their potential …

Review of high-throughput computational design of Heusler alloys

S Jiang, K Yang - Journal of Alloys and Compounds, 2021 - Elsevier
As one large family of intermetallic compounds, Heusler compounds offer a wide playground
for novel materials design because of their wide range of compositions and tunable …

Strain engineering of electronic structure, phonon, and thermoelectric properties of p-type half-Heusler semiconductor

SA Khandy, JD Chai - Journal of Alloys and Compounds, 2021 - Elsevier
We thoroughly inspected the strain induced electronic properties, phonon dynamics and
thermoelectric performance of ZrRhSb compound via density functional theory calculations …

Spin gapless quantum materials and devices

M Nadeem, X Wang - Advanced Materials, 2024 - Wiley Online Library
Quantum materials, with nontrivial quantum phenomena and mechanisms, promise efficient
quantum technologies with enhanced functionalities. Quantum technology is held back …

Electronic, magnetic and transport properties of anti-ferromagnetic semiconductor BaGd2X4 (XS, Se)

XP Wei, LL Du, J Shen, ZQ Sun, ZM Zhang… - Materials Science in …, 2024 - Elsevier
Thermoelectric materials, which are a functional ones that directly convert heat energy into
electrical energy without any pollution, have attend widespread concentration. In the current …

High-throughput design of perpendicular magnetic anisotropy at quaternary Heusler and MgO interfaces

S Jiang, K Yang - npj Computational Materials, 2023 - nature.com
Heusler alloys combined with MgO interfaces exhibit interfacial perpendicular magnetic
anisotropy, making them attractive for energy-efficient spintronic technologies. However …