(57) ABSTRACT A method of forming a finFET device includes forming a plurality offins on a
Substrate; forming a plurality of dummy gate structures over the plurality of fins, the dummy …

(57) ABSTRACT A method of forming a semiconductor device including pro viding a
functional gate structure on a channel portion of a semiconductor Substrate. A gate sidewall …

Primary Examiner—Mohsen Ahmadi (74) Attorney, Agent, or Firm—Michael O'Keefe (57)
ABSTRACT The method includes forming a first opening in a dielectric layer exposing a …

US9105606B2 - Self aligned contact with improved robustness - Google Patents US9105606B2
- Self aligned contact with improved robustness - Google Patents Self aligned contact with …

The present invention relates generally to semiconductors, and more particularly, to a
structure and method of mini mizing shorting between epitaxial regions in Small pitch fin …

The present invention relates generally to semiconductors, and more particularly, to a
structure and method of mini mizing shorting between epitaxial regions in Small pitch fin …

According to an embodiment, a method of physically separating epitaxial regions in fin field
effect transistors (FinFETs) is disclosed. The method may include: forming a dielectric region …

BACKGROUND The present invention generally relates to semiconductor manufacturing,
and more particularly to fabricating electri cally insulated contacts of a logic device and a …

The present invention relates generally to semiconductors, and more particularly, to a
structure and method of mini mizing shorting between epitaxial regions in small pitch fin field …

Semiconductor structures and method for forming the same are provided. The
semiconductor structure includes a fin protruding from a substrate and a gate stack formed …