Emerging classes of flexible electronic sensors as alternatives to conventional rigid sensors
offer a powerful set of capabilities for detecting and quantifying physiological and physical …

The scaling of metal oxide semiconductor field effect transistors (MOSFETs) for data storing
and logic circuit operation has reached a critical point, beyond which further scaling poses …

Tree-shaped Nanosheet FETS (NSFET) is the most dependable way to scale down the gate
lengths deep. This paper investigates the 12nm gate length (LG) n-type Tree-shaped NSFET …

This manuscript for the first time presents the digital and analog/RF performance analysis for
novel Tree-shaped Junctionless Nanosheet (NS) FET. An additional inter-bridge (IB) …

Through‑silicon via (TSV) is one of the most important features in 3D integrated circuit (IC)
and 2.5 D packaging. Both are within the advanced packaging topic for the digital and …

This study outlines strategies for the development of an ultra-high responsivity wide band
ZnO/Si-based heterojunction photodetector (PD). The incorporation of a UV-enhanced Si …

Forming ohmic contacts between metals and semiconductors is critical to achieving high-
performance and energy-efficient electronics. Here we investigate the interface properties of …

Since the 1960s, the feature size of metal oxide semiconductor field-effect transistors has
been scaled down to sub-micrometer and even nanometer to increase the transistor density …

Aligned carbon nanotubes (A-CNTs) have been demonstrated to be promising materials for
constructing advanced complementary metal–oxide–semiconductor (CMOS) field-effect …

Alzheimer's disease (AD) is closely related to neurodegeneration, leading to dementia and
cognitive impairment, especially in people aged> 65 years old. The detection of biomarkers …