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Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous
and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of …
and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of …
Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures
High work-function metals such as Ni, Pt, and Au in the form of multilayer structures, Ni/Au
and Ni/Pt/Au, have been investigated as Schottky metallizations on AlGaN/GaN …
and Ni/Pt/Au, have been investigated as Schottky metallizations on AlGaN/GaN …
Microscopic Origin of Polarization Charges at / Interfaces
Ga N/(Al, Ga) N heterojunctions are at the heart of high-electron-mobility transistors that are
being adopted for high-power and high-frequency applications. The strong polarization …
being adopted for high-power and high-frequency applications. The strong polarization …
High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure
Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF
GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The …
GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The …
210-GHz InAlN/GaN HEMTs with dielectric-free passivation
Lattice-matched depletion-mode InAlN/AlN/GaN high-electron mobility transistors (HEMTs)
on a SiC substrate were fabricated, for the first time, with a dielectric-free passivation (DFP) …
on a SiC substrate were fabricated, for the first time, with a dielectric-free passivation (DFP) …
InAlN/GaN HEMT on Si with fmax= 270 GHz
Device surface properties are critical for its performance such as channel electron density,
leakage current, subthreshold swing (SS), and noise in gallium nitride high-electron-mobility …
leakage current, subthreshold swing (SS), and noise in gallium nitride high-electron-mobility …
Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures
The surface of the AlGaN barrier layer in AlGaN/GaN high electron mobility transistors has
strong and hitherto unexplained effects on transistor characteristics. Indeed, it has been …
strong and hitherto unexplained effects on transistor characteristics. Indeed, it has been …
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
Y Lv, Z Lin, TD Corrigan, J Zhao, Z Cao… - Journal of Applied …, 2011 - pubs.aip.org
Ni Schottky contacts on AlGaN/GaN heterostructures have been fabricated, and one of the
prepared samples has been annealed at 700 C for half an hour. The barrier heights for the …
prepared samples has been annealed at 700 C for half an hour. The barrier heights for the …
Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs
The interface between silicon nitride (SiN x) gate dielectric grown by low pressure chemical
vapor deposition (LPCVD) and III-nitride heterostructure is investigated by a systematical …
vapor deposition (LPCVD) and III-nitride heterostructure is investigated by a systematical …
Enhancement-mode AlN/GaN HFETs using Cat-CVD SiN
High-performance enhancement-mode (E-mode) AIN (2.5 nm)/GaN heterostructure field-
effect transistors (HFETs) were fabricated with a novel method using SiN passivation by …
effect transistors (HFETs) were fabricated with a novel method using SiN passivation by …