Making clean electrical contacts on 2D transition metal dichalcogenides
Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have
emerged as highly promising for new electronic technologies. However, a key challenge in …
emerged as highly promising for new electronic technologies. However, a key challenge in …
High-K materials and metal gates for CMOS applications
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
Ultralow contact resistance between semimetal and monolayer semiconductors
Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …
Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt (Ni)-MoS2 and Bi-MoS2 …
S Li, J Chen, X He, Y Zheng, C Yu, H Lu - Applied Surface Science, 2023 - Elsevier
The generation of Schottky barrier height (SBH) at the metal–semiconductor junctions (MSJ)
is a hot topic in the area of new two-dimensional (2D) semiconductors. As the charge …
is a hot topic in the area of new two-dimensional (2D) semiconductors. As the charge …
Contact structure of semiconductor device
SL Wang, S Ding-Kang, CH Lin, SP Sun… - US Patent …, 2015 - Google Patents
The invention relates to a contact structure of a semiconduc tor device. An exemplary
structure for a contact structure for a semiconductor device comprises a Substrate …
structure for a contact structure for a semiconductor device comprises a Substrate …
[HTML][HTML] The physics and chemistry of the Schottky barrier height
RT Tung - Applied Physics Reviews, 2014 - pubs.aip.org
The formation of the Schottky barrier height (SBH) is a complex problem because of the
dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface …
dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface …
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
Two-dimensional (2D) semiconductors have shown great potential for electronic and
optoelectronic applications. However, their development is limited by a large Schottky …
optoelectronic applications. However, their development is limited by a large Schottky …
ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors
X Wen, W Lei, X Li, B Di, Y Zhou, J Zhang, Y Zhang… - Nano Letters, 2023 - ACS Publications
Recent investigations reveal elemental semimetal (Bi and Sb) contacts fabricated with
conventional deposition processes exhibit a remarkable capacity of approaching the …
conventional deposition processes exhibit a remarkable capacity of approaching the …
WSe2 field effect transistors with enhanced ambipolar characteristics
One of the most relevant features that a semiconducting channel material can offer when
used in a field-effect transistor (FET) layout is its capability to enable both electron transport …
used in a field-effect transistor (FET) layout is its capability to enable both electron transport …
Bright and Efficient Light‐Emitting Devices Based on 2D Transition Metal Dichalcogenides
Abstract 2D monolayer transition metal dichalcogenides (TMDCs) show great promise for
the development of next‐generation light‐emitting devices owing to their unique electronic …
the development of next‐generation light‐emitting devices owing to their unique electronic …