Recent advances and challenges in indium gallium nitride (inxga1-xn) materials for solid state lighting
R Kour, S Arya, S Verma, A Singh… - ECS Journal of Solid …, 2019 - iopscience.iop.org
In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …
scientific research has to be focused on the development of materials that fulfil the growing …
Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys
H Pedersen, CW Hsu, N Nepal… - Crystal Growth & …, 2023 - ACS Publications
Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility,
making it suitable for IR-range optoelectronics and high-frequency transistors. However, the …
making it suitable for IR-range optoelectronics and high-frequency transistors. However, the …
Comparing LDA-1/2, HSE03, HSE06 and G0W0 approaches for band gap calculations of alloys
It has long been known that the local density approximation and the generalized gradient
approximation do not furnish reliable band gaps, and one needs to go beyond these …
approximation do not furnish reliable band gaps, and one needs to go beyond these …
[HTML][HTML] Microwave plasma-assisted reactive HiPIMS of InN films: Plasma environment and material characterisation
This work focuses on the low temperature fabrication process of InN thin films via microwave
plasma-assisted reactive high power impulse magnetron sputtering (MAR-HiPIMS). The …
plasma-assisted reactive high power impulse magnetron sputtering (MAR-HiPIMS). The …
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Indium nitride (InN) is characterized by its high electron mobility, making it a ground-
breaking material for high frequency electronics. The difficulty of depositing high-quality …
breaking material for high frequency electronics. The difficulty of depositing high-quality …
Investigation of InAlN layers surface reactivity after thermal annealings: a complete XPS study for HEMT
Y Bourlier, M Bouttemy, O Patard… - ECS Journal of Solid …, 2018 - iopscience.iop.org
The surface chemistry of InAlN ultra-thin layers, having undergone an oxidation procedure
usually running through the HEMT fabrication process (850 C, O 2 and O 2+ Ar) is studied by …
usually running through the HEMT fabrication process (850 C, O 2 and O 2+ Ar) is studied by …
The chemistry of the s-and p-block elements with 2, 2′: 6′, 2′′-terpyridine ligands
The coordination chemistry of the 2, 2′: 6′, 2′′-terpyridine (tpy) ligand is dominated by
the transition-metal and rare-earth-metal ions. Some of these complexes have found …
the transition-metal and rare-earth-metal ions. Some of these complexes have found …
Atomic layer deposition of InN using trimethylindium and ammonia plasma
Indium nitride (InN) is a low bandgap, high electron mobility semiconductor material of
interest to optoelectronics and telecommunication. Such applications require the deposition …
interest to optoelectronics and telecommunication. Such applications require the deposition …
Transition from Metal-Rich to N-Rich Growth for Core–Shell InGaN Nanowires on Si (111) at the Onset of In Desorption
R Deng, X Pan, H Hong, G Yang, X Pu… - Crystal Growth & …, 2023 - ACS Publications
The growth of InGaN on Si in the regime slightly above the onset of In desorption naturally
leads to the formation of core–shell InGaN nanowires (NWs) by plasma-assisted molecular …
leads to the formation of core–shell InGaN nanowires (NWs) by plasma-assisted molecular …
Hexacoordinated gallium (III) triazenide precursor for epitaxial gallium nitride by atomic layer deposition
Gallium nitride (GaN) is the main component of modern-day high electron mobility
transistors due to its favorable electronic properties. As electronic devices become smaller …
transistors due to its favorable electronic properties. As electronic devices become smaller …