Devices enabling early detection of low concentrations of leaking hydrogen and precision
measurements in a wide range of hydrogen concentrations in hydrogen storage systems are …

Although line defects endow excellent catalytic performance by undercoordinated sites with
compressive tensile strain, few studies have systematically unraveled the relationship …

Transverse thermoelectric conversion phenomena including the anomalous Ettingshausen
effect (AEE) and anomalous Nernst effect (ANE) in magnetic materials are actively …

Unidirectional spin Hall magnetoresistance (USMR) has emerged as a promising candidate
for magnetoresistive random-access memory (MRAM) technology. However, the realization …

Recently, the inertia has been demonstrated for magnetization dynamics, such as the
nutational resonance and spin wave, as well as the inertial switching. Here, we focus on the …

Spin–orbit torque (SOT) in the heavy elements with a large spin–orbit coupling (SOC) has
been frequently used to manipulate the magnetic states in spintronic devices. Recent …

Magnetic tunnel junctions (MTJs), as the core storage unit of magneto resistive random-
access memory, plays important role in the cutting-edge spintronics. In the MTJ devices …

Fieldlike spin-orbit torque, which behaves like a torque from a magnetic field, but relies on
the current together with the damplike one, was recognized to influence magnetization …

It is demonstrated by means of ultra high vacuum (UHV) surface‐sensitive techniques and
periodic density functional theory (DFT) calculations that the electronic and NO− adsorption …

Despite the recent activity in the field of studying the properties of systems formed during the
adsorption of metal atoms on the surface of oxides, many questions of a fundamental nature …