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Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing
H Sakurai, M Omori, S Yamada, Y Furukawa… - Applied Physics …, 2019 - pubs.aip.org
A high activation ratio of acceptors to Mg ions implanted into a homoepitaxial GaN layer was
achieved through an ultra-high-pressure annealing (UHPA) process. Capless annealing …
achieved through an ultra-high-pressure annealing (UHPA) process. Capless annealing …
[HTML][HTML] Progress on and challenges of p-type formation for GaN power devices
The fabrication processes of p-type regions for vertical GaN power devices are investigated.
A p-type body layer in a trench gate metal-oxide-semiconductor field-effect transistor …
A p-type body layer in a trench gate metal-oxide-semiconductor field-effect transistor …
Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy
Properties of minority carrier (electron) traps in Schottky type p-GaN gate high electron
mobility transistors were explicitly investigated by optical deep level transient spectroscopy …
mobility transistors were explicitly investigated by optical deep level transient spectroscopy …
Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis
K Iwata, H Sakurai, S Arai, T Nakashima… - Journal of Applied …, 2020 - pubs.aip.org
Defects in Mg ion-implanted GaN epitaxial layers formed after annealing at 1573 K and at
1753 K were analyzed by transmission electron microscopy. Degradation of the GaN …
1753 K were analyzed by transmission electron microscopy. Degradation of the GaN …
Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg
To accelerate the development of GaN power devices, reproducible fabrication of p-type
GaN (p-GaN) segments by ion-implantation (I/I) that enables selective-area do** is …
GaN (p-GaN) segments by ion-implantation (I/I) that enables selective-area do** is …
Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires
W Lu, N Sone, N Goto, K Iida, A Suzuki, DP Han… - Nanoscale, 2019 - pubs.rsc.org
Coaxial GaInN/GaN multiple-quantum-shells (MQSs) nanowires (NWs) were grown on an n-
type GaN/sapphire template employing selective growth by metal–organic chemical vapour …
type GaN/sapphire template employing selective growth by metal–organic chemical vapour …
[HTML][HTML] Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted …
For rooting the development of GaN-based optoelectronic devices, understanding the roles
of midgap recombination centers (MGRCs), namely, nonradiative recombination centers and …
of midgap recombination centers (MGRCs), namely, nonradiative recombination centers and …
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices
Implementing selective-area p-type do** through ion implantation is the most attractive
choice for the fabrication of GaN-based bipolar power and related devices. However, the low …
choice for the fabrication of GaN-based bipolar power and related devices. However, the low …
Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method
To investigate the carrier recombination processes in GaN crystals grown by the low-
pressure acidic ammonothermal (LPAAT) method, the photoluminescence (PL) spectra and …
pressure acidic ammonothermal (LPAAT) method, the photoluminescence (PL) spectra and …
Annealing behavior of vacancy‐type defects in Mg‐and H‐implanted GaN studied using monoenergetic positron beams
Vacancy‐type defects in Mg‐implanted GaN with and without hydrogen (H) implantation are
probed by using monoenergetic positron beams. Mg+ and H+ ions are implanted into GaN …
probed by using monoenergetic positron beams. Mg+ and H+ ions are implanted into GaN …