High on–off ratio improvement of ZnO-based forming-free memristor by surface hydrogen annealing

Y Sun, X Yan, X Zheng, Y Liu, Y Zhao… - … applied materials & …, 2015 - ACS Publications
In this work, a high-performance, forming-free memristor based on Au/ZnO nanorods/AZO
(Al-doped ZnO conductive glass) sandwich structure has been developed by rapid hydrogen …

Enhanced resistive switching and magnetic properties of Gd-doped NiFe2O4 thin films prepared by chemical solution deposition method

A Hao, M Ismail, S He, N Qin, R Chen, AM Rana… - Materials Science and …, 2018 - Elsevier
Influence of Gd ion do** on resistive switching (RS) and magnetic properties of NiFe 2 O 4
(NiFe 2− x Gd x O 4, NFG-x) thin films prepared by chemical solution deposition method was …

Electric field-induced magnetic switching in Mn: ZnO film

SX Ren, GW Sun, J Zhao, JY Dong, Y Wei… - Applied Physics …, 2014 - pubs.aip.org
A large magnetic modulation, accompanied by stable bipolar resistive switching (RS)
behavior, was observed in a Mn: ZnO film by applying a reversible electric field. A significant …

Magnetization and Resistance Switchings Induced by Electric Field in Epitaxial Mn:ZnO/BiFeO3 Multiferroic Heterostructures at Room Temperature

D Li, W Zheng, D Zheng, J Gong, L Wang… - … Applied Materials & …, 2016 - ACS Publications
Electric field induced reversible switchings of the magnetization and resistance were
achieved at room temperature in epitaxial Mn: ZnO (110)/BiFeO3 (001) heterostructures. The …

Study of resistive switching and magnetism modulation in the Pt/CoFe2O4/Nb: SrTiO3 heterostructures

Q Wang, Y Zhu, X Liu, M Zhao, M Wei, F Zhang… - Applied Physics …, 2015 - pubs.aip.org
CoFe 2 O 4 (CFO) thin films are epitaxially grown on Nb doped (001) SrTiO 3 (NSTO) single-
crystal substrates by pulsed laser deposition to form Pt/CFO/NSTO heterostructures. These …

Bending effect on the resistive switching behavior of a NiO/TiO 2 p–n heterojunction

H Cui, J Li, H Yuan - RSC advances, 2018 - pubs.rsc.org
Herein, NiO/TiO2 heterojunctions were fabricated by sol–gel spin coating on plastic
substrates to investigate the effects of bending on resistive switching. The switching …

Ferromagnetism in Ti-doped ZnO thin films

Q Shao, C Wang, JA Zapien, CW Leung… - Journal of Applied …, 2015 - pubs.aip.org
We report our study on the origin of ferromagnetism in Ti-doped ZnO. A series of Ti doped
ZnO films with increasing concentration of Ti dopant were grown and characterized in terms …

Electric field-induced coexistence of nonvolatile resistive and magnetization switching in Pt/NiO/Nb: SrTiO3 heterostructure

M Zhao, Y Zhu, Q Wang, M Wei, X Liu, F Zhang… - Applied Physics …, 2016 - pubs.aip.org
We report the coexistence of nonvolatile resistive and magnetization switching in Pt/NiO/Nb:
SrTiO 3 heterostructures. These structures exhibit bipolar resistive switching (RS) behavior …

Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials

X Li, J Jia, Y Li, Y Bai, J Li, Y Shi, L Wang, X Xu - Scientific reports, 2016 - nature.com
Combining resistive switching and magnetoresistance in a system exhibits great potential for
application in multibit nonvolatile data storage. It is in significance and difficulty to seek a …

Influence of defects on the photocatalytic activity of Niobium-doped ZnO nanoparticles

MK Satheesan, KV Baiju, V Kumar - Journal of Materials Science: Materials …, 2017 - Springer
Niobium (Nb)-doped zinc oxide nanoparticles have been prepared by a simple sol–gel
method. The structural, optical and photocatalytic activity of Nb-doped ZnO nanoparticles …