Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory
An apparatus is provided which comprises: a magnetic junction including: a first structure
comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to …
comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to …
Integrated circuit with thicker metal lines on lower metallization layer
K Chang, YT Hou, CH Wang, YC Hou - US Patent 11,113,443, 2021 - Google Patents
An IC structure includes first, second, third and fourth transistors on a substrate, and first and
second metallization layers over the transistors. The first metallization layer has a plurality of …
second metallization layers over the transistors. The first metallization layer has a plurality of …
Semiconductor device and manufacturing method thereof
M Manfrini, CT Lin, KI Goto - US Patent 11,569,294, 2023 - Google Patents
2020-08-05 Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ASSIGNMENT OF …
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ASSIGNMENT OF …
Memory cell device with thin-film transistor selector and methods for forming the same
WU Yong-Jie, YC Ho, HH Wei, CJ Yu… - US Patent …, 2023 - Google Patents
2021-05-30 Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
LIMITED reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY …
LIMITED reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY …
Semiconductor devices including spin-orbit torque line and contact plug
KH Lee, WJ Kim, GH Koh - US Patent 11,532,782, 2022 - Google Patents
(57) ABSTRACT A semiconductor device includes first and second contact plugs in an
insulating layer that is on a substrate, the first and second contact plugs spaced apart from …
insulating layer that is on a substrate, the first and second contact plugs spaced apart from …
Encapsulation topography-assisted self-aligned MRAM top contact
Encapsulation topography-assisted techniques for forming self-aligned top contacts in
MRAM devices are provided. In one aspect, a method for forming an MRAM device includes …
MRAM devices are provided. In one aspect, a method for forming an MRAM device includes …
Two terminal spin orbit memory devices and methods of fabrication
(57) ABSTRACT A memory device includes a first electrode including a spin-orbit material, a
magnetic junction on a portion of the first electrode and a first structure including a dielectric …
magnetic junction on a portion of the first electrode and a first structure including a dielectric …
Cap** layer for liner-free conductive structures
SS Liang, CI Tsai, CW Chang, CH Huang… - US Patent …, 2024 - Google Patents
The present disclosure describes a method for forming cap** layers configured to prevent
the migration of out-diffused cobalt atoms into upper metallization layers In some …
the migration of out-diffused cobalt atoms into upper metallization layers In some …
Integrated circuit with thicker metal lines on lower metallization layer
K Chang, YT Hou, CH Wang, YC Hou - US Patent 11,593,546, 2023 - Google Patents
2021-08-17 Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ASSIGNMENT OF …
reassignment TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ASSIGNMENT OF …
Cap** layer for liner-free conductive structures
SS Liang, CI Tsai, CW Chang, CH Huang… - US Patent …, 2022 - Google Patents
The present disclosure describes a method for forming cap** layers configured to prevent
the migration of out diffused cobalt atoms into upper metallization layers In some …
the migration of out diffused cobalt atoms into upper metallization layers In some …