Recent progress on the electronic structure, defect, and do** properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …
electronics with capabilities beyond existing technologies due to its large bandgap …
Guest Editorial: The dawn of gallium oxide microelectronics
Among semiconductors, Si is the foundational technology against which all others are
compared. The bandgap is large enough to allow for the conductivity of the material to be …
compared. The bandgap is large enough to allow for the conductivity of the material to be …
β-Ga2O3 for wide-bandgap electronics and optoelectronics
Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …
semiconducting oxide, which attracted recently much scientific and technological attention …
Progress in state-of-the-art technologies of Ga2O3 devices
C Wang, J Zhang, S Xu, C Zhang, Q Feng… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications
X Hou, Y Zou, M Ding, Y Qin, Z Zhang… - Journal of Physics D …, 2020 - iopscience.iop.org
Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …
to its critical applications, especially in safety and space detection. A DUV photodetector …
Perspective—opportunities and future directions for Ga2O3
The β-polytype of Ga 2 O 3 has a bandgap of∼ 4.8 eV, can be grown in bulk form from melt
sources, has a high breakdown field of∼ 8 MV. cm− 1 and is promising for power electronics …
sources, has a high breakdown field of∼ 8 MV. cm− 1 and is promising for power electronics …
Radiation damage effects in Ga 2 O 3 materials and devices
The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation
hardness. Their suitability for space missions or military applications, where issues of …
hardness. Their suitability for space missions or military applications, where issues of …
State-of-the-art technologies of gallium oxide power devices
M Higashiwaki, A Kuramata, H Murakami… - Journal of Physics D …, 2017 - iopscience.iop.org
Abstract Gallium oxide (Ga $ _ {2} $ O $ _ {3} $) has gained increased attention for power
devices due to its superior material properties and the availability of economical device …
devices due to its superior material properties and the availability of economical device …