Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

N Zagni, FM Puglisi, P Pavan… - Proceedings of the …, 2023 - ieeexplore.ieee.org
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …

A computational study of hafnia-based ferroelectric memories: From ab initio via physical modeling to circuit models of ferroelectric device

M Pešić, C Künneth, M Hoffmann… - Journal of computational …, 2017 - Springer
The discovery of ferroelectric properties of binary oxides revitalized the interest in
ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor …

[BOOK][B] Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films

E Yurchuk - 2015 - books.google.com
Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric
material (silicon doped hafnium oxide) were studied within the scope of the present work …

Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O2-Based Ferroelectric NVDRAM

D Ettisserry, A Visconti, M Bonanomi… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
NVDRAM is a 32Gb, dual layer 3D stacked, non-volatile (Hf, Zr) O 2-based 1T1C (1
Transistor 1 Capacitor) ferroelectric memory technology. With high capacity, low cost and …

Observation and control of hot atom damage in ferroelectric devices

M Masuduzzaman, D Varghese… - … on Electron Devices, 2014 - ieeexplore.ieee.org
Ferroelectric materials are the most common example of a Landau structure, defined as a
system having an atom/mass moving in a double-well energy landscape. These materials …

Materials Engineering for High Performance Ferroelectric Memory

A Chavan, A Rajagopal, Y Yan, I Asano… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
NVDRAM is a high density (32Gb), dual layer 3D stacked,(Hf, Zr) O 2-based non-volatile
ferroelectric memory. With 5.7 nm thin ferroelectric film, NVDRAM offers high performance …

Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions

PG Ravikumar, PV Ravindran… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
In this work, we report the first comprehensive time-dependent dielectric breakdown (TDDB)
study on ultra-thin HfO 2-based ferroelectric under bipolar stress conditions. Here, field …

Fundamental design principles of novel MEMS based" Landau" switches, sensors, and actuators: Role of electrode geometry and operation regime

A Jain - 2014 - search.proquest.com
Microelectromechanical systems (MEMS) are considered as potential candidates for" More-
Moore" and" More-than-Moore" applications due to their versatile use as sensors, switches …

[CITATION][C] Reliability of ferroelectric devices

PG Ravikumar, A Khan - 2023 - Elsevier