Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …
much attention due to their technological potential in terms of scalability, high-speed, and …
A computational study of hafnia-based ferroelectric memories: From ab initio via physical modeling to circuit models of ferroelectric device
The discovery of ferroelectric properties of binary oxides revitalized the interest in
ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor …
ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor …
[BOOK][B] Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films
E Yurchuk - 2015 - books.google.com
Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric
material (silicon doped hafnium oxide) were studied within the scope of the present work …
material (silicon doped hafnium oxide) were studied within the scope of the present work …
Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O2-Based Ferroelectric NVDRAM
D Ettisserry, A Visconti, M Bonanomi… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
NVDRAM is a 32Gb, dual layer 3D stacked, non-volatile (Hf, Zr) O 2-based 1T1C (1
Transistor 1 Capacitor) ferroelectric memory technology. With high capacity, low cost and …
Transistor 1 Capacitor) ferroelectric memory technology. With high capacity, low cost and …
Observation and control of hot atom damage in ferroelectric devices
Ferroelectric materials are the most common example of a Landau structure, defined as a
system having an atom/mass moving in a double-well energy landscape. These materials …
system having an atom/mass moving in a double-well energy landscape. These materials …
Materials Engineering for High Performance Ferroelectric Memory
NVDRAM is a high density (32Gb), dual layer 3D stacked,(Hf, Zr) O 2-based non-volatile
ferroelectric memory. With 5.7 nm thin ferroelectric film, NVDRAM offers high performance …
ferroelectric memory. With 5.7 nm thin ferroelectric film, NVDRAM offers high performance …
Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions
In this work, we report the first comprehensive time-dependent dielectric breakdown (TDDB)
study on ultra-thin HfO 2-based ferroelectric under bipolar stress conditions. Here, field …
study on ultra-thin HfO 2-based ferroelectric under bipolar stress conditions. Here, field …
Fundamental design principles of novel MEMS based" Landau" switches, sensors, and actuators: Role of electrode geometry and operation regime
A Jain - 2014 - search.proquest.com
Microelectromechanical systems (MEMS) are considered as potential candidates for" More-
Moore" and" More-than-Moore" applications due to their versatile use as sensors, switches …
Moore" and" More-than-Moore" applications due to their versatile use as sensors, switches …
[CITATION][C] Reliability of ferroelectric devices
PG Ravikumar, A Khan - 2023 - Elsevier