Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which
makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon …

This paper demonstrates the fabrication of nanometer-scale metal contacts on individual
graphene nanoribbons (GNRs) and the use of these contacts to control the electronic …

Under thin film deposition, when used in conjunction with the semiconductor atomic layer
deposition (ALD) method, the choice of precursor determines the properties and quality of …

In the present study, HfO 2 thin films were fabricated via atomic layer deposition (ALD) using
a novel heteroleptic metal organic precursor [tris (dimethylamino) …

With the increased application range of Hf-based oxides in memory devices, such as high-k
capacitors, gate dielectrics, and ferroelectric devices, improvement in the properties of HfO 2 …

High-k hafnium oxide (HfO 2) film was prepared by high power impulse magnetron
sputtering (HiPIMS). The influences of oxygen supply on the plasma state, film properties …

Defect properties of four types of hafnium defects in SiO 2, viz, silicon substitution by hafnium
(Hf Si), oxygen substitution by hafnium (Hf O), hafnium interstitial (Hf i) and oxygen vacancy …

Although it has long been known that metal-containing compounds can serve as catalysts
for chemical vapor deposition (CVD) of films from other precursors, we show that metal …

Patterning during a nanofabrication process could be designed with a variety of techniques
to manifest spatial control of chemical reactions and it is categorized as a top-down or a …

Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which
makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon …