Oxide semiconductors have been extensively studied as active channel layers of thin-film
transistors (TFTs) for electronic applications. However, the field-effect mobility (μ FE) of oxide …

This review paper focuses on the recent knowledge about airborne molecular contamination
(AMC) and its impacts on 300-mm wafer fabrication processes. The adverse impacts on …

Amorphous indium gallium zinc oxide (IGZO) deposited by plasma-enhanced atomic layer
deposition (PEALD) thin-film transistors (TFTs) was fabricated using SiO 2 gate insulators …

Roles of oxygen interstitial defects located in the In–Ga–Zn-O (IGZO) thin films prepared by
atomic layer deposition were investigated with controlling the cationic compositions and …

Pulsed laser deposition (PLD) and two-step thermal annealing are combined to fabricate
MgO, TiO 2, Y 2 O 3, Al 2 O 3, ZrO 2 and HfO 2 passivation layers on a-IGZO TFTs. The …

In this work, device degradation of metal oxide (MO) thin-film transistors (TFTs) under
positive bias stress, linear stress, and saturation stress is systematically investigated. A …

In the present work, the impact of ZrO2 gate dielectric thickness on the electrical
performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive …

Thin‐film transistors (TFTs) in practical operations are inevitably impacted by moisture and
temperature. An investigation on the joint effect of environmental moisture and working …

Degradation of InSnZnO thin-film transistors (TFTs) under negative bias stress (NBS) is
systematically studied in this work. A two-stage degradation behavior is observed for the first …

Atomic layer deposition (ALD) has been studied extensively to employ oxide semiconductor
thin film transistor (TFT) including both active layer and gate insulator (GI). Herein, we …