Variability in resistive memories
Resistive memories are outstanding electron devices that have displayed a large potential in
a plethora of applications such as nonvolatile data storage, neuromorphic computing …
a plethora of applications such as nonvolatile data storage, neuromorphic computing …
On the thermal models for resistive random access memory circuit simulation
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …
operation and exhibit a set of technological features that make them ideal candidates for …
Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing
The fabrication of integrated circuits (ICs) employing two-dimensional (2D) materials is a
major goal of semiconductor industry for the next decade, as it may allow the extension of …
major goal of semiconductor industry for the next decade, as it may allow the extension of …
Holistic variability analysis in resistive switching memories using a Two-Dimensional Variability Coefficient
We present a new methodology to quantify the variability of resistive switching memories.
Instead of statistically analyzing few data points extracted from current versus voltage (I–V) …
Instead of statistically analyzing few data points extracted from current versus voltage (I–V) …
[HTML][HTML] Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective
We have analyzed variability in resistive memories (Resistive Random Access Memories,
RRAMs) making use of advanced numerical techniques to process experimental …
RRAMs) making use of advanced numerical techniques to process experimental …
Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories
The relevance of the intrinsic series resistance effect in the context of resistive random
access memory (RRAM) compact modeling is investigated. This resistance notably affects …
access memory (RRAM) compact modeling is investigated. This resistance notably affects …
[HTML][HTML] Parameter extraction techniques for the analysis and modeling of resistive memories
A revision of the different numerical techniques employed to extract resistive switching (RS)
and modeling parameters is presented. The set and reset voltages, commonly used for …
and modeling parameters is presented. The set and reset voltages, commonly used for …
Conductance quantization in h-bn memristors
Memristive devices made of multilayer hexagonal boron nitride are attracting much attention
for information storage, computation, encryption, and communication. Generating multilevel …
for information storage, computation, encryption, and communication. Generating multilevel …
[HTML][HTML] An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
An in-depth simulation and experimental study has been performed to analyze thermal
effects on the variability of resistive memories. Kinetic Monte Carlo (kMC) simulations, that …
effects on the variability of resistive memories. Kinetic Monte Carlo (kMC) simulations, that …
Parameter extraction methods for assessing device-to-device and cycle-to-cycle variability of memristive devices at wafer scale
The stochastic nature of the resistive switching (RS) process in memristive devices makes
device-to-device (DTD) and cycle-to-cycle (CTC) variabilities relevant magnitudes to be …
device-to-device (DTD) and cycle-to-cycle (CTC) variabilities relevant magnitudes to be …