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Fermi level pinning dependent 2D semiconductor devices: challenges and prospects
Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …
The Schottky barrier transistor in emerging electronic devices
This paper explores how the Schottky barrier (SB) transistor is used in a variety of
applications and material systems. A discussion of SB formation, current transport …
applications and material systems. A discussion of SB formation, current transport …
Ultralow contact resistance between semimetal and monolayer semiconductors
Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …
Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …
Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt (Ni)-MoS2 and Bi-MoS2 …
S Li, J Chen, X He, Y Zheng, C Yu, H Lu - Applied Surface Science, 2023 - Elsevier
The generation of Schottky barrier height (SBH) at the metal–semiconductor junctions (MSJ)
is a hot topic in the area of new two-dimensional (2D) semiconductors. As the charge …
is a hot topic in the area of new two-dimensional (2D) semiconductors. As the charge …
The Schottky–Mott rule expanded for two-dimensional semiconductors: Influence of substrate dielectric screening
A comprehensive understanding of the energy level alignment mechanisms between two-
dimensional (2D) semiconductors and electrodes is currently lacking, but it is a prerequisite …
dimensional (2D) semiconductors and electrodes is currently lacking, but it is a prerequisite …
Latest advance on seamless metal-semiconductor contact with ultralow Schottky barrier in 2D-material-based devices
Abstract 2D-material semiconductors with unique photonic and optoelectronic properties
process ultralow energy consumption and are naturally compatible to semiconductor …
process ultralow energy consumption and are naturally compatible to semiconductor …
Graphene/M2OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact
X Liu, J Yang, X Deng, Z Tang… - ACS Applied Electronic …, 2024 - ACS Publications
Two-dimensional (2D) Janus semiconductor materials have shown significant potential in
the fields of electronics and optoelectronics. The problem of interface contact with electrodes …
the fields of electronics and optoelectronics. The problem of interface contact with electrodes …
Quasi-bonding-induced gap states in metal/two-dimensional semiconductor junctions: Route for Schottky barrier height reduction
LX Zhou, YT Ren, YT Chen, XH Lv, CD **, H Zhang… - Physical Review B, 2022 - APS
The van der Waals interface and interfacial reconstruction between two-dimensional (2D)
transition-metal dichalcogenides (TMDCs) and metal electrodes significantly influence their …
transition-metal dichalcogenides (TMDCs) and metal electrodes significantly influence their …
Contact Resistance Engineering in WS2-Based FET with MoS2 Under-Contact Interlayer: A Statistical Approach
One of the primary factors hindering the development of 2D material-based devices is the
difficulty of overcoming fabrication processes, which pose a challenge in achieving low …
difficulty of overcoming fabrication processes, which pose a challenge in achieving low …