Fermi level pinning dependent 2D semiconductor devices: challenges and prospects

X Liu, MS Choi, E Hwang, WJ Yoo, J Sun - Advanced Materials, 2022 - Wiley Online Library
Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …

The Schottky barrier transistor in emerging electronic devices

M Schwarz, TD Vethaak, V Derycke… - …, 2023 - iopscience.iop.org
This paper explores how the Schottky barrier (SB) transistor is used in a variety of
applications and material systems. A discussion of SB formation, current transport …

Ultralow contact resistance between semimetal and monolayer semiconductors

PC Shen, C Su, Y Lin, AS Chou, CC Cheng, JH Park… - Nature, 2021 - nature.com
Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Q Wang, L Cao, SJ Liang, W Wu, G Wang… - npj 2D Materials and …, 2021 - nature.com
Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …

Comparative study of the micro-mechanism of charge redistribution at metal-semiconductor and semimetal-semiconductor interfaces: Pt (Ni)-MoS2 and Bi-MoS2 …

S Li, J Chen, X He, Y Zheng, C Yu, H Lu - Applied Surface Science, 2023 - Elsevier
The generation of Schottky barrier height (SBH) at the metal–semiconductor junctions (MSJ)
is a hot topic in the area of new two-dimensional (2D) semiconductors. As the charge …

The Schottky–Mott rule expanded for two-dimensional semiconductors: Influence of substrate dielectric screening

S Park, T Schultz, D Shin, N Mutz, A Aljarb, HS Kang… - ACS …, 2021 - ACS Publications
A comprehensive understanding of the energy level alignment mechanisms between two-
dimensional (2D) semiconductors and electrodes is currently lacking, but it is a prerequisite …

Latest advance on seamless metal-semiconductor contact with ultralow Schottky barrier in 2D-material-based devices

S Chen, S Wang, C Wang, Z Wang, Q Liu - Nano Today, 2022 - Elsevier
Abstract 2D-material semiconductors with unique photonic and optoelectronic properties
process ultralow energy consumption and are naturally compatible to semiconductor …

Graphene/M2OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact

X Liu, J Yang, X Deng, Z Tang… - ACS Applied Electronic …, 2024 - ACS Publications
Two-dimensional (2D) Janus semiconductor materials have shown significant potential in
the fields of electronics and optoelectronics. The problem of interface contact with electrodes …

Quasi-bonding-induced gap states in metal/two-dimensional semiconductor junctions: Route for Schottky barrier height reduction

LX Zhou, YT Ren, YT Chen, XH Lv, CD **, H Zhang… - Physical Review B, 2022 - APS
The van der Waals interface and interfacial reconstruction between two-dimensional (2D)
transition-metal dichalcogenides (TMDCs) and metal electrodes significantly influence their …

Contact Resistance Engineering in WS2-Based FET with MoS2 Under-Contact Interlayer: A Statistical Approach

M Giza, M Świniarski, AP Gertych… - … Applied Materials & …, 2024 - ACS Publications
One of the primary factors hindering the development of 2D material-based devices is the
difficulty of overcoming fabrication processes, which pose a challenge in achieving low …