The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …

An indispensable part of our personal and working lives, computing has also become
essential to industries and governments. Steady improvements in computer hardware have …

Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

Moore's law technology scaling has improved performance by five orders of magnitude in
the last four decades. As advanced technologies continue the pursuit of Moore's law, a …

In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the
gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep …

Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an
increasingly important role when semiconductor devices are scaled to decananometer and …

This paper presents an overview of process variation effects, including examples of
mitigation strategies and test methods. Experimental and theoretical comparisons are …

This letter investigates the possibility to replace numerical TCAD device simulations with a
multi-layer neural network (NN). We explore if it is possible to train the NN with the required …

To overcome the limitations of chemical do** in nanometer-scale semiconductor devices,
electrostatic do** (ED) is emerging as a broadly investigated alternative to provide …

The key message of this paper is that process variation is not an insurmountable barrier to
Moore's Law, but is simply another challenge to be overcome. This message is illustrated …