Abstract Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …

ABSTRACT β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG)
semiconductor with a bandgap energy of∼ 4.8 eV and a predicted high critical electric field …

This Letter reports a high performance β-Ga 2 O 3 thin channel MOSFET with T gate and
degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor …

Vertical β-Ga 2 O 3 Schottky diodes from metal-organic chemical vapor deposition (MOCVD)-
grown epitaxial films are reported in this paper for high-power application devices. The …

Ultrawide bandgap (UWBG) semiconductors, with energy bandgaps (> 4 eV), much wider
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …

In this work, the structural and electrical properties of metalorganic chemical vapor
deposited Si-doped β-(Al x Ga 1− x) 2 O 3 thin films grown on (010) β-Ga 2 O 3 substrates …

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown
(010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8× 10 13 cm− 2 …

In this work, we systematically investigate the effects of growth parameters on the structural
and surface morphological properties of β-(Al x Ga1− x) 2O3 thin films grown on (010) β …

The ability to achieve highly resistive beta-phase gallium oxide (β-Ga 2 O 3) layers and
substrates is critical for β-Ga 2 O 3 high voltage and RF devices. To date, the most common …

The β-(Al x Ga 1− x) 2 O 3 alloy represents an emerging ultrawide bandgap semiconductor
material for applications in high-power electronics and deep ultraviolet optoelectronics. The …