Recent progress in voltage control of magnetism: Materials, mechanisms, and performance
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …
research activity driven by its profound physics and enormous potential for application. This …
Towards magnonic devices based on voltage-controlled magnetic anisotropy
Despite significant technological advances in miniaturization and operational speed,
modern electronic devices suffer from unescapably increasing rates of Joule heating and …
modern electronic devices suffer from unescapably increasing rates of Joule heating and …
Voltage-gate-assisted spin-orbit-torque magnetic random-access memory for high-density and low-power embedded applications
The voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the
advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) …
advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) …
Large voltage-induced changes in the perpendicular magnetic anisotropy of an MgO-based tunnel junction with an ultrathin Fe layer
We study the voltage control of perpendicular magnetic anisotropy in an ultrathin Fe layer
sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface …
sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface …
Recent progress in the voltage-controlled magnetic anisotropy effect and the challenges faced in develo** voltage-torque MRAM
The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
Voltage controlled interfacial magnetism through platinum orbits
Electric fields at interfaces exhibit useful phenomena, such as switching functions in
transistors, through electron accumulations and/or electric dipole inductions. We find one …
transistors, through electron accumulations and/or electric dipole inductions. We find one …
Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB| MgO interface
We studied the impact of different insertion layers (Ta, Pt, and Mg) at the CoFeB| MgO
interface on voltage-controlled magnetic anisotropy (VCMA) effect and other magnetic …
interface on voltage-controlled magnetic anisotropy (VCMA) effect and other magnetic …
Modulation of heavy metal/ferromagnetic metal interface for high‐performance spintronic devices
Spintronic devices such as magnetic tunnel junctions and skyrmions have attracted
considerable attention due to features such as nonvolatility, high scalability, low power, and …
considerable attention due to features such as nonvolatility, high scalability, low power, and …
Comparative evaluation of spin-transfer-torque and magnetoelectric random access memory
Spin-transfer torque random access memory (STT-RAM), as a promising nonvolatile
memory technology, faces challenges of high write energy and low density. The recently …
memory technology, faces challenges of high write energy and low density. The recently …
A recent progress of spintronics devices for integrated circuit applications
T Endoh, H Honjo - Journal of Low Power Electronics and Applications, 2018 - mdpi.com
Nonvolatile (NV) memory is a key element for future high-performance and low-power
microelectronics. Among the proposed NV memories, spintronics-based ones are …
microelectronics. Among the proposed NV memories, spintronics-based ones are …