Applications of nanoimprint lithography/hot embossing: a review
Y Chen - Applied Physics A, 2015 - Springer
This review concentrates on the applications of nanoimprint lithography (NIL) and hot
embossing for the fabrications of nanolectronic devices, nanophotonic metamaterials and …
embossing for the fabrications of nanolectronic devices, nanophotonic metamaterials and …
Silicon nanowire field effect transistor sensors with minimal sensor-to-sensor variations and enhanced sensing characteristics
Silicon nanowire field effect transistor (FET) sensors have demonstrated their ability for rapid
and label-free detection of proteins, nucleotide sequences, and viruses at ultralow …
and label-free detection of proteins, nucleotide sequences, and viruses at ultralow …
Noise spectroscopy of nanowire structures: fundamental limits and application aspects
S Vitusevich, I Zadorozhnyi - Semiconductor Science and …, 2017 - iopscience.iop.org
Nanowires (NWs) have recently emerged as a new class of materials demonstrating unique
properties which may completely differ from their bulk counterparts. The main aim of this …
properties which may completely differ from their bulk counterparts. The main aim of this …
Effect of gamma irradiation on dynamics of charge exchange processes between single trap and nanowire channel
In the present study, transport properties and single trap phenomena in silicon nanowire
(NW) field‐effect transistors (FETs) are reported. The dynamic behavior of drain current in …
(NW) field‐effect transistors (FETs) are reported. The dynamic behavior of drain current in …
Complementary metal oxide semiconductor compatible silicon nanowires-on-a-chip: Fabrication and preclinical validation for the detection of a cancer prognostic …
An integrated translational biosensing technology based on arrays of silicon nanowire field-
effect transistors (SiNW FETs) is described and has been preclinically validated for the …
effect transistors (SiNW FETs) is described and has been preclinically validated for the …
Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors
Y Zhang, N Boichuk, D Pustovyi… - Advanced Materials …, 2023 - Wiley Online Library
The transport and noise properties of fabricated, high‐performance, gate‐all‐around silicon
liquid‐gated nanowire field‐effect transistor devices are investigated in different …
liquid‐gated nanowire field‐effect transistor devices are investigated in different …
High sensitivity silicon single nanowire junctionless phototransistor
A high-gain photodetector based on junctionless MOSEFT has been presented in this work.
Tri-gate junctionless nanowire phototransistors were fabricated on (100) silicon-on-insulator …
Tri-gate junctionless nanowire phototransistors were fabricated on (100) silicon-on-insulator …
Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties
F Gasparyan, H Khondkaryan, A Arakelyan… - Journal of Applied …, 2016 - pubs.aip.org
The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p+-
pp+ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and …
pp+ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and …
Mobility-Modulation Field Effect Transistor Based on Electrospun Aluminum Doped Zinc Oxide Nanowires
This paper presents the findings of research into field effect transistors (FET) based on
aluminum doped zinc oxide (AZO) nanowires that resulted in develo** an effective field …
aluminum doped zinc oxide (AZO) nanowires that resulted in develo** an effective field …
Unusual impact of electron-phonon scattering in Si nanowire field-effect-transistors: A possible route for energy harvesting
In the current work, the impact of electron-phonon scattering phenomena on the transport
behaviour of silicon nanowire field-effect-transistors with sub-mean free path channel length …
behaviour of silicon nanowire field-effect-transistors with sub-mean free path channel length …