Silicon offers multiple advantages to power circuit designers, but at the same time suffers
from limitations that are inherent to silicon material properties, such as low bandgap energy …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

Electromagnetic launch science and technology in the United States is on the threshold of a
major new advance in its development. Significant developments in hypervelocity …

The high peak current withstand capability of thyristors makes them extremely suitable for
pulsed power applications. Silicon carbide (SiC) thyristors provide significant efficiency …

In this paper, the on-state and switching performance of 4H-SiC UMOSFETs, TIGBTs, BJTs,
SIThs, and GTOs with voltage ratings from 1 to 10 kV are simulated at different temperatures …

The US Army Research Laboratory has been exploring silicon and silicon carbide supergate
turn-off thyristors (SGTOs) for high-power pulse switching required by Army survivability and …

High-power and temperature pulsed-power electronics can be exploited by future military
combat systems using advanced electric weapon concepts such as electrothermal-chemical …

We developed a 10-kV-class high-voltage SiC thyristor for pulsed power generators which
turns on without a gate signal through the displacement current to the depletion layer of a n …

This paper reports on the first demonstration of a half-bridge power inverter constructed from
silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This …

Silicon carbide (SiC) has been attracting much attention because of its potential application
to high performance power devices with the capability of operating at high temperature …