Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

SiC MOSFETs (silicon carbide metal‐oxide semiconductor field‐effect transistors) are
replacing Si insulated gate bipolar transistors in many power conversion applications due to …

A review of the basic mechanisms affecting the stability of the threshold voltage in response
to a bias-temperature stress is presented in terms of the charging and activation of near …

A sustainable energy future requires power electronics that can enable significantly higher
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …

We have observed significant instability in the threshold voltage of 4H-SiC metal-oxide-
semiconductor field-effect transistors due to gate-bias stressing. This effect has a strong …

Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

Fast states at SiO 2/SiC interfaces annealed in NO at 1150–1350 C have been investigated.
The response frequency of the interface states was measured by the conductance method …

Abstract 4H-SiC (0001),(0001), and (1120) have been directly oxidized by N 2 O at 1300 C,
and metal–oxide–semiconductor (MOS) interfaces have been characterized. The interface …

We report an effective approach to reduce defects at a SiC/SiO 2 interface. Since oxidation
of SiC may inevitably lead to defect creation, the idea is to form the interface without …

This paper reviews advanced gate dielectric processes for SiC MOSFETs. The poor quality
of the SiO 2/SiC interface severely limits the value of the channel field-effect mobility …