The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

Rare-earth doped materials are of crucial importance to optoelectronics, and are widely
deployed in fibre amplifiers and solid-state lasers. This article summarises the present state …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Wide bandgap nitride semiconductors have recently attracted a great level of attention
owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters …

With the increasing power density and reduced size of the GaN-based electronic power
converters, the heat dissipation in the devices becomes the key issue toward the real …

During the last few years the interest in the indium nitride (InN) semiconductor has been
remarkable. There have been significant improvements in the growth of InN films. High …

The classical formulation of Eshelby (Proc. Royal Society, A241, p. 376, 1957) for embedded
inclusions is revisited and modified by incorporating the previously excluded …

Transient electron transport and velocity overshoot in wurtzite GaN, InN, and AlN are
examined and compared with that which occurs in GaAs. For all materials, we find that …

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

X-ray photoelectron spectroscopy has been used to investigate the properties of AlN films
deposited using a low temperature plasma-enhanced atomic layer deposition process …